| 低噪声CMOS电荷灵敏前置放大器 | |
| 邓智 ; 康克军 ; 程建平 ; 刘以农 ; DENG Zhi ; KANG Kejun ; CHENG Jianping ; LIU Yinong | |
| 2010-06-10 ; 2010-06-10 | |
| 关键词 | 核电子学 电荷灵敏前置放大器 CMOS专用集成电路 nuclear electronics charge sensitive preamplifier CMOS application specific integrated circuits TL821 |
| 其他题名 | Low-noise CMOS charge-sensitive preamplifier |
| 中文摘要 | 为了满足辐射探测器的读出密度要求,完成了低噪声CM O S专用集成电荷灵敏前置放大器的设计和测试。采用0.6μm CM O S工艺,电路面积为260μm×210μm,功耗为15.9mW,比传统的电荷灵敏前放的电路密度至少提高了3个数量级。测量得到的噪声结果为:在成形时间为1μs时,零电容噪声为1 377.1 e,电容噪声斜率为43.7 e/pF。噪声的实测结果和理论分析比较吻合,间接测量了使用工艺NM O S的1/f噪声系数,为低噪声设计提供了参考依据。; A low-noise CMOS charge sensitive preamplifier was built using a 0.6 μm CMOS process to achieve the readout density requirement for radiation detectors.The preamplifier costs were(260 μm)×210 μm in area and 15.9 mW in power consumption.The density was increased by a factor of at least 3 orders of magnitude compared to traditional charge sensitive preamplifiers.Measured results show that the equivalent noise charge is(1 377.1 e) of zero-capacitance noise and 43.7 e/pF of capacitance ratio with a shaping time of 1 μs.This noise level is in agreement with theoretical analysis but needs to be improved further.The 1/f noise coefficient of the NMOS device in the process was also calculated.; 国家自然科学基金重点资助项目(10135040) |
| 语种 | 中文 ; 中文 |
| 内容类型 | 期刊论文 |
| 源URL | [http://hdl.handle.net/123456789/63433]  |
| 专题 | 清华大学 |
| 推荐引用方式 GB/T 7714 | 邓智,康克军,程建平,等. 低噪声CMOS电荷灵敏前置放大器[J],2010, 2010. |
| APA | 邓智.,康克军.,程建平.,刘以农.,DENG Zhi.,...&LIU Yinong.(2010).低噪声CMOS电荷灵敏前置放大器.. |
| MLA | 邓智,et al."低噪声CMOS电荷灵敏前置放大器".(2010). |
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