| MOS场效应晶体管辐照特性的实验研究 | |
| 皇甫丽英 ; 金平 ; 勾秋静 ; 李冬梅 ; HUANGFU Li-ying ; JIN Ping ; GOU Qiu-jing ; LI Dong-mei | |
| 2010-06-09 ; 2010-06-09 | |
| 关键词 | MOS器件 辐照效应 阈值电压漂移 宽长比 MOS device Radiation effect threshold voltage shift W/L TN386.6 |
| 其他题名 | Experimeatal Study on MOSFET under Irradiation Condition |
| 中文摘要 | 通过对NMOS和PMOS场效应晶体管在60Coγ射线下的辐照实验,研究辐照对不同宽长比(W/L)及不同偏置电压下的MOS管的阈值电压及其转移特性的影响。实验证明辐照使MOS管的阈值电压负向漂移,辐照时非零栅源电压引起的MOS管阈值电压漂移明显大于零栅源电压情况,宽长比对阈值电压漂移量影响不大。; Custom test chips including NMOS and PMOS devices were tested after irradiated by ~(60)Coγ-ray.The threshold voltage shift induced by irradiation was studied based on the test results.Both NMOS and PMOS threshold voltages shifted negatively and the shifts were much lager when the device gates biased during irradiation than none biased.The difference of W/L showed no influence on the threshold voltage shift. |
| 语种 | 中文 ; 中文 |
| 内容类型 | 期刊论文 |
| 源URL | [http://hdl.handle.net/123456789/54647]  |
| 专题 | 清华大学 |
| 推荐引用方式 GB/T 7714 | 皇甫丽英,金平,勾秋静,等. MOS场效应晶体管辐照特性的实验研究[J],2010, 2010. |
| APA | 皇甫丽英.,金平.,勾秋静.,李冬梅.,HUANGFU Li-ying.,...&LI Dong-mei.(2010).MOS场效应晶体管辐照特性的实验研究.. |
| MLA | 皇甫丽英,et al."MOS场效应晶体管辐照特性的实验研究".(2010). |
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