Simulation of growth process of thin film on non-planar substrate

CORC > 上海光学精密机械研究所 > 中国科学院上海光学精密机械研究所 > 光学薄膜技术研究与发展中心

	Simulation of growth process of thin film on non-planar substrate
	Qi HJ(齐红基) ; Shao JD(邵建达) ; Zhang DP ; Yi K ; Fan ZX(范正修)
刊名	appl. surf. sci.
	2005
卷号	249 期号:1~4 页码:85
关键词	simulation morphology growth model
ISSN号	0169-4332
中文摘要	in (2 + 1) dimension, growth process of thin film on non-planar substrate in kuramoto-sivashinsky model is studied with numerical simulation approach. 15 x 15 semi-ellipsoids arranged orderly on the surface of substrate are used to represent initial rough surface. the results show that at the initial stage of growth process, the surface morphology of thin film appears to be grid-structure, and the interface width constantly decreases with the growth time, then reaches minimum. however, the grid-structure becomes ambiguous, and granules of different sizes distribute evenly on the surface of thin film with the increase of growth time. thereafter, the average size of granules and the interface width gradually increase, and the surface morphology of thin film presents fractal properties. the numerical results of height-height correlation functions of thin film verify the surface morphology of thin film to be fractal for a longer growth time. by fitting of the height-height correlation functions of thin film with different growth times, the growth process is described quantitatively. (c) 2004 elsevier b.v. all rights reserved.
学科主题	光学薄膜
收录类别	EI
语种	英语
WOS记录号	WOS:000230607800014
公开日期	2009-09-22
内容类型	期刊论文
源URL	[http://ir.siom.ac.cn/handle/181231/4120]
专题	上海光学精密机械研究所_光学薄膜技术研究与发展中心
推荐引用方式 GB/T 7714	Qi HJ,Shao JD,Zhang DP,et al. Simulation of growth process of thin film on non-planar substrate[J]. appl. surf. sci.,2005,249(1~4):85, 90.
APA	齐红基,邵建达,Zhang DP,Yi K,&范正修.(2005).Simulation of growth process of thin film on non-planar substrate.appl. surf. sci.,249(1~4),85.
MLA	齐红基,et al."Simulation of growth process of thin film on non-planar substrate".appl. surf. sci. 249.1~4(2005):85.