| 外延单片式激光二极管抽运被动调Q微激光器 | |
| 饶海波 ; 廖云 ; 成建波 ; 闫平 ; 王云祥 ; Rao Haibo ; Liao Yun ; Cheng Jianbo ; Yan Ping ; Wang Yunxiang | |
| 2010-06-08 ; 2010-06-08 | |
| 关键词 | 激光器 微片激光器 液相外延 单片式 被动调Q lasers microchip laser liquid phase epitaxy monolithic passively Q-switching TN248 |
| 其他题名 | Laser Diode-Pumped Passively Q-Switched Monolithic Microchip Laser Based on Liquid Phase Epitaxy |
| 中文摘要 | 基于液相外延工艺,实现了一种结构新颖的单片式被动调Q微片激光器。采用了在激光介质Nd3+∶YAG表面直接液相外延生长一层具有饱和吸收特性的Cr4+∶YAG膜的微谐振腔的结构,由于是同质外延生长过程,能够确保饱和吸收体与增益介质间(Nd3+∶YAG/Cr4+∶YAG)良好的界面特性。采用光纤耦合激光二极管,在激光二极管输出为1W的抽运条件下,实现了峰值功率近千瓦、稳定重复频率在4kHz以上、脉宽1.8ns、TEM00单横模式、波长1.064μm的调Q脉冲序列输出。在对新型单片式微激光器的性能报道的基础上,阐述了外延单片式结构及其相应工艺的潜在优势。; A novel monolithic passively Q-switched microchip laser is presented with a microcavity by directly growing a thin Cr4+∶YAG film with saturable absorption on the surface of the laser medium Nd3+∶YAG by liquid phase epitaxy.Because of the homogeneous epitaxial process,a good interface property is achieved between active medium Nd3+∶YAG and saturable absorber Cr4+∶YAG.Pumped by 1 W output of a fiber-coupled laser diode,the novel laser produces Q-switched pulses sequence with wavelength 1.064 μm,pulse duration 1.8 ns, pulse repetition over 4 kHz,TEM00 mode and peak power nearly 1 kW.Except for the detailed descriptions of the performance of the laser,the potential advantages of the structure and relevant processes are also discussed.; 四川省科技攻关计划基金(01GG1901); 国家863激光创新基金(20030510)资助课题 |
| 语种 | 中文 ; 中文 |
| 内容类型 | 期刊论文 |
| 源URL | [http://hdl.handle.net/123456789/49249]  |
| 专题 | 清华大学 |
| 推荐引用方式 GB/T 7714 | 饶海波,廖云,成建波,等. 外延单片式激光二极管抽运被动调Q微激光器[J],2010, 2010. |
| APA | 饶海波.,廖云.,成建波.,闫平.,王云祥.,...&Wang Yunxiang.(2010).外延单片式激光二极管抽运被动调Q微激光器.. |
| MLA | 饶海波,et al."外延单片式激光二极管抽运被动调Q微激光器".(2010). |
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