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	Diffusion barrier performances of direct current sputter-deposited Mo and Mo/sub x/N films between Cu and Si
	He, Y. ; Feng, J.Y.
	2010-05-10 ; 2010-05-10
关键词	Experimental/ annealing diffusion barriers integrated circuit interconnections integrated circuit metallisation metallic thin films molybdenum molybdenum compounds scanning electron microscopy sputtered coatings surface morphology X-ray diffraction/ direct current diffusion barrier sputter deposition X-ray diffraction scanning electron microscopy morphological evolution annealing Cu metallization Cu-MoN-Si Cu-Mo-Si Si/ A6822 Surface diffusion, segregation and interfacial compound formation A6855 Thin film growth, structure, and epitaxy A6820 Solid surface structure A6170A Annealing processes B2550F Metallisation and interconnection technology B2550A Annealing processes in semiconductor technology B2570 Semiconductor integrated circuits/ Cu-MoN-Si/int MoN/int Cu/int Mo/int Si/int N/int MoN/bin Mo/bin N/bin Cu/el Si/el Cu-Mo-Si/int Cu/int Mo/int Si/int Cu/el Mo/el Si/el Si/sur Si/el
中文摘要	In this work, we have investigated the diffusion barrier performance of Mo and Mo/sub x/N films deposited by direct current sputtering between the Cu and Si substrates. thetas -2 thetas X-ray diffraction patterns showed the temperature of the Cu/sub 3/Si phase formed in three different structures. The results of scanning electron microscopy indicated the morphological evolution of the sample surfaces after annealing at different temperatures. Four-probe measurements showed that the Mo/sub x/N barrier was better at maintaining the good electrical performance of the Cu metallization system than the Mo barrier. [All rights reserved Elsevier].
语种	英语 ; 英语
出版者	Elsevier ; Netherlands
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/21833]
专题	清华大学
推荐引用方式 GB/T 7714	He, Y.,Feng, J.Y.. Diffusion barrier performances of direct current sputter-deposited Mo and Mo/sub x/N films between Cu and Si[J],2010, 2010.
APA	He, Y.,&Feng, J.Y..(2010).Diffusion barrier performances of direct current sputter-deposited Mo and Mo/sub x/N films between Cu and Si..
MLA	He, Y.,et al."Diffusion barrier performances of direct current sputter-deposited Mo and Mo/sub x/N films between Cu and Si".(2010).

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