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	A new method of fabricating strained Silicon materials
	Yang Zongren ; Liang Renrong ; Xu Jun
	2010-05-07 ; 2010-05-07
会议名称	RARE METALS ; 10th China/Korea Workshop on Advanced Materials ; Huangshan, PEOPLES R CHINA ; Web of Science
关键词	strained Si SiGe oxidation strain relaxation MOBILITY ENHANCEMENT SI MOSFETS Materials Science, Multidisciplinary Metallurgy & Metallurgical Engineering
中文摘要	Strain-relaxed SiGe virtual substrates are of great importance for fabricating strained Si materials. Instead of using graded buffer method to obtain fully relaxed SiGe film, in this study a new method to obtain relaxed SiGe film and strained Si film with much thinner SiGe film was proposed. Almost fully relaxed thin SiGe buffer layer was obtained by Si/SiGe/Si multi-structure oxidation and the SiO2 layer removing before SiGe regrowth. Raman spectroscopy analysis indicates that the regrown SiGe film has a strain relaxation ratio of about 93 % while the Si cap layer has a strain of 0. 63 %. AFM shows good surface roughness. This new method is proved to be a useful approach to fabricate thin relaxed epilayers and strain Si films.
会议录出版者	NONFERROUS METALS SOCIETY CHINA ; BEIJING ; NO. 30 XUEYUAN RD, BEIJING 100083, PEOPLES R CHINA
语种	英语 ; 英语
内容类型	会议论文
源URL	[http://hdl.handle.net/123456789/16900]
专题	清华大学
推荐引用方式 GB/T 7714	Yang Zongren,Liang Renrong,Xu Jun. A new method of fabricating strained Silicon materials[C]. 见:RARE METALS, 10th China/Korea Workshop on Advanced Materials, Huangshan, PEOPLES R CHINA, Web of Science.

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