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	Simulation of spin-polarized transport in SiGe/Ge/SiGe heterostructure
	Zou Jianping ; Tian Lilin ; Yu Zhiping
	2010-05-07 ; 2010-05-07
关键词	Practical Theoretical or Mathematical/ elemental semiconductors field effect transistors Ge-Si alloys germanium Monte Carlo methods semiconductor heterojunctions spin polarised transport spin-orbit interactions two-dimensional electron gas/ spin polarized transport heterostructure Monte Carlo approach hole spin precession Rashba spin-orbit interaction 2DHG channel modulation-doped structure spin scattering length spin relaxation drain current transconductance spin FET 77 to 300 K SiGe-Ge-SiGe/ A7225 Spin polarized transport A7340L Electrical properties of semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions A7170E Spin-orbit coupling, Zeeman, Stark and strain splitting (condensed matter) B2530B Semiconductor junctions B2560S Other field effect devices/ temperature 7.7E+01 to 3.0E+02 K/ SiGe-Ge-SiGe/int SiGe/int Ge/int Si/int SiGe/bin Ge/bin Si/bin Ge/el
中文摘要	The Monte Carlo approach is utilized to study spin-polarized transport in SiGe/Ge/SiGe heterostructure. The hole spin precession is controlled by the Rashba spin-orbit interaction in 2DHG formed in Ge channel modulation-doped structure. Spin-polarized properties, including the spin scattering length and the spin polarization, are investigated at the temperature ranging from 77 to 300 K. Simulation results from Monte Carlo show that at a low temperature or by a narrow 2D-channel, the spin relaxation can be effectively reduced and the spin scattering length can be increased. The gate-controlled spin effect of the drain current induces a large improvement of transconductance, or a negative transconductance effect.
语种	英语 ; 英语
出版者	Science Press ; China
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/16698]
专题	清华大学
推荐引用方式 GB/T 7714	Zou Jianping,Tian Lilin,Yu Zhiping. Simulation of spin-polarized transport in SiGe/Ge/SiGe heterostructure[J],2010, 2010.
APA	Zou Jianping,Tian Lilin,&Yu Zhiping.(2010).Simulation of spin-polarized transport in SiGe/Ge/SiGe heterostructure..
MLA	Zou Jianping,et al."Simulation of spin-polarized transport in SiGe/Ge/SiGe heterostructure".(2010).

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