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	Current status and future trends of SiGe BiCMOS technology
	Wang Fei ; Xu Jun ; Liu Dao-guang
	2010-05-07 ; 2010-05-07
关键词	Practical/ BiCMOS integrated circuits Ge-Si alloys heterojunction bipolar transistors mobile communication/ BiCMOS technology wireless communication HBT IBM Jazz Semiconductor 0.5 micron SiGe/ B2570K Mixed technology integrated circuits B2560J Bipolar transistors B6250F Mobile radio systems/ size 5.0E-07 m/ SiGe/int Ge/int Si/int SiGe/bin Ge/bin Si/bin
中文摘要	The state-of-the-art and future direction of SiGe BiCMOS technology targeted for applications such as wireless communication are dealt with. The common aspects for device structure and process flow of SiGe HBT's are discussed. Based on IBM's 0.5 mu m SiGe BiCMOS, the integration approach of SiGe BiCMOS is described in detail. Since BAG has decoupled the thermal budget of SiGe HBT and CMOS, feature size below 0.25 mu m is becoming more popular. Finally, the roadmap of SiGe BiCMOS is summarized based on product lines of IBM and Jazz Semiconductor.
语种	中文 ; 中文
出版者	Editorial Dept. Microelectronics ; China
内容类型	期刊论文
源URL	[http://hdl.handle.net/123456789/16565]
专题	清华大学
推荐引用方式 GB/T 7714	Wang Fei,Xu Jun,Liu Dao-guang. Current status and future trends of SiGe BiCMOS technology[J],2010, 2010.
APA	Wang Fei,Xu Jun,&Liu Dao-guang.(2010).Current status and future trends of SiGe BiCMOS technology..
MLA	Wang Fei,et al."Current status and future trends of SiGe BiCMOS technology".(2010).

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