| Enhanced quantum confined Pockels effect in graded SiGe superlattices | |
| Yu, Pu ; Wu, Han ; Zhu, Bang-Fen | |
| 2010-05-06 ; 2010-05-06 | |
| 会议名称 | Physics of Semiconductors, Pts A and B ; 28th International Conference on the Physics of Semiconductors (ICPS-28) ; Vienna, AUSTRIA ; Web of Science ; INSPEC |
| 关键词 | nonlinear optics pockets effect superlattice silicon INPLANE OPTICAL ANISOTROPY Physics, Multidisciplinary |
| 中文摘要 | A new type of structure, the graded-SixGe1-x/Si superlattice with giant Pockels coefficient as 10(-9) cm/V is predicted. Three types of graded-SixGe1-x/Si superlattices, i.e. the profile of sawtooth, parabola and anti-parabola, are investigated, respectively. The most promising structure among them has been worked out, and interpreted by the competition between the quantum confinement of carriers and the spatial variation rate of the composition x in graded layers. |
| 会议录出版者 | AMER INST PHYSICS ; MELVILLE ; 2 HUNTINGTON QUADRANGLE, STE 1NO1, MELVILLE, NY 11747-4501 USA |
| 语种 | 英语 ; 英语 |
| 内容类型 | 会议论文 |
| 源URL | [http://hdl.handle.net/123456789/6922]  |
| 专题 | 清华大学 |
| 推荐引用方式 GB/T 7714 | Yu, Pu,Wu, Han,Zhu, Bang-Fen. Enhanced quantum confined Pockels effect in graded SiGe superlattices[C]. 见:Physics of Semiconductors, Pts A and B, 28th International Conference on the Physics of Semiconductors (ICPS-28), Vienna, AUSTRIA, Web of Science, INSPEC. |
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