A larger nonvolatile bipolar resistive switching memory behaviour fabricated using eggshells

CORC > 昆明植物研究所 > 中国科学院昆明植物研究所 > 植物化学与西部植物资源持续利用国家重点实验室

	A larger nonvolatile bipolar resistive switching memory behaviour fabricated using eggshells
	Zhou, Guangdong 1,2,3; Sun, Bai 2,3,4; Zhou, Ankun 5; Wu, Bo 6; Huang, Haishen 6
刊名	CURRENT APPLIED PHYSICS
	2017-02-01
卷号	17 期号:2 页码:235-239
关键词	Resistive switching memory Eggshell dielectric films Redox-based filaments
英文摘要	Resistive random access memory (RRAM) devices have emerged as promising candidates for near future nonvolatile information storage. Eggshells, a food waste, have not been focused and recycled sustainably today. Eggshell-based devices have shown a large resistive-switching(RS) memory behaviors with favorable resistance ratio of similar to 10(3), larger memory window of similar to 3.5 V, and high endurance and retention performance. Redox-based Ag filament models involving the formation and rupture of the metallic conduction filaments between top and bottom electrodes are proposed to interpret the large nonvolatile bipolar RS memory behaviors. This discovery provides for the possibility of an environmentally friendly, low-cost and sustainable material application in the next-generation nonvolatile date storage device. (C) 2016 Elsevier B.V. All rights reserved.
类目[WOS]	Materials Science, Multidisciplinary ; Physics, Applied
研究领域[WOS]	Materials Science ; Physics
关键词[WOS]	CONDUCTIVE FILAMENTS ; DEVICES ; MATRIX ; FILMS ; NANOFILAMENTS ; NANOPARTICLES ; ELECTROLYTE ; TRANSISTORS ; MECHANISM ; PROTEIN
收录类别	SCI
语种	英语
WOS记录号	WOS:000393245500020
内容类型	期刊论文
源URL	[http://ir.kib.ac.cn/handle/151853/41902]
专题	昆明植物研究所_植物化学与西部植物资源持续利用国家重点实验室
作者单位	1.Guizhou Inst Technol, Guiyang 550003, Guizhou, Peoples R China 2.Southwest Univ, ICEAM, Chongqing 400715, Peoples R China 3.Chongqing Key Lab Adv Mat & Technol Clean Energy, Chongqing 400715, Peoples R China 4.Southwest Jiaotong Univ, Sch Phys Sci & Technol, Chengdu 610031, Sichuan, Peoples R China 5.Chinese Acad Sci, KunMing Inst Bot, Kunming 650201, Peoples R China 6.Zunyi Normal Coll, Inst Theoret Phys, Zunyi 563002, Peoples R China
推荐引用方式 GB/T 7714	Zhou, Guangdong,Sun, Bai,Zhou, Ankun,et al. A larger nonvolatile bipolar resistive switching memory behaviour fabricated using eggshells[J]. CURRENT APPLIED PHYSICS,2017,17(2):235-239.
APA	Zhou, Guangdong,Sun, Bai,Zhou, Ankun,Wu, Bo,&Huang, Haishen.(2017).A larger nonvolatile bipolar resistive switching memory behaviour fabricated using eggshells.CURRENT APPLIED PHYSICS,17(2),235-239.
MLA	Zhou, Guangdong,et al."A larger nonvolatile bipolar resistive switching memory behaviour fabricated using eggshells".CURRENT APPLIED PHYSICS 17.2(2017):235-239.