Compensated Semimetal LaSb with Unsaturated Magnetoresistance

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	Compensated Semimetal LaSb with Unsaturated Magnetoresistance
	Zeng, LK; Lou, R; Wu, DS; Xu, QN; Guo, PJ; Kong, LY; Zhong, YG; Ma, JZ; Fu, BB; Richard, P
刊名	PHYSICAL REVIEW LETTERS
	2016
卷号	117 期号:12 页码:-
ISSN号	0031-9007
通讯作者	Wang, SC (reprint author), Renmin Univ China, Dept Phys, Beijing 100872, Peoples R China. ; Wang, SC (reprint author), Renmin Univ China, Beijing Key Lab Optoelect Funct Mat & Micronano D, Beijing 100872, Peoples R China.
英文摘要	By combining angle-resolved photoemission spectroscopy and quantum oscillation measurements, we performed a comprehensive investigation on the electronic structure of LaSb, which exhibits near-quadratic extremely large magnetoresistance(XMR) without any sign of saturation at magnetic fields as high as 40 T. We clearly resolve one spherical and one intersecting-ellipsoidal hole Fermi surfaces (FSs) at the Brillouin zone (BZ) center G and one ellipsoidal electron FS at the BZ boundary X. The hole and electron carriers calculated from the enclosed FS volumes are perfectly compensated, and the carrier compensation is unaffected by temperature. We further reveal that LaSb is topologically trivial but shares many similarities with the Weyl semimetal TaAs family in the bulk electronic structure. Based on these results, we have examined the mechanisms that have been proposed so far to explain the near-quadratic XMR in semimetals.
收录类别	SCI
语种	英语
WOS记录号	WOS:000383344000019
内容类型	期刊论文
源URL	[http://ir.sinap.ac.cn/handle/331007/26454]
专题	上海应用物理研究所_中科院上海应用物理研究所2011-2017年
推荐引用方式 GB/T 7714	Zeng, LK,Lou, R,Wu, DS,et al. Compensated Semimetal LaSb with Unsaturated Magnetoresistance[J]. PHYSICAL REVIEW LETTERS,2016,117(12):-.
APA	Zeng, LK.,Lou, R.,Wu, DS.,Xu, QN.,Guo, PJ.,...&Ding, H.(2016).Compensated Semimetal LaSb with Unsaturated Magnetoresistance.PHYSICAL REVIEW LETTERS,117(12),-.
MLA	Zeng, LK,et al."Compensated Semimetal LaSb with Unsaturated Magnetoresistance".PHYSICAL REVIEW LETTERS 117.12(2016):-.