Control of magnetic relaxation by electric-field-induced ferroelectric phase transition and inhomogeneous domain switching

CORC > 上海硅酸盐研究所 > 中国科学院上海硅酸盐研究所 > 无机功能材料与器件重点实验室 > 期刊论文

	Control of magnetic relaxation by electric-field-induced ferroelectric phase transition and inhomogeneous domain switching
	Nan, Tianxiang 1; Emori, Satoru 1; Peng, Bin 2; Wang, Xinjun 1; Hu, Zhongqiang 1; Xie, Li 1; Gao, Yuan 1; Lin, Hwaider 1; Jiao, Jie 3; Luo, Haosu 3
刊名	APPLIED PHYSICS LETTERS
	2016-01-04
卷号	108 期号:1
英文摘要	Electric-field modulation of magnetism in strain-mediated multiferroic heterostructures is considered a promising scheme for enabling memory and magnetic microwave devices with ultralow power consumption. However, it is not well understood how electric-field-induced strain influences magnetic relaxation, an important physical process for device applications. Here, we investigate resonant magnetization dynamics in ferromagnet/ferroelectric multiferroic heterostructures, FeGaB/PMN-PT and NiFe/PMN-PT, in two distinct strain states provided by electric-field-induced ferroelectric phase transition. The strain not only modifies magnetic anisotropy but also magnetic relaxation. In FeGaB/PMN-PT, we observe a nearly two-fold change in intrinsic Gilbert damping by electric field, which is attributed to strain-induced tuning of spin-orbit coupling. By contrast, a small but measurable change in extrinsic linewidth broadening is attributed to inhomogeneous ferroelastic domain switching during the phase transition of the PMN-PT substrate. (C) 2016 AIP Publishing LLC.
WOS标题词	Science & Technology ; Physical Sciences
类目[WOS]	Physics, Applied
研究领域[WOS]	Physics
关键词[WOS]	MAGNETOELECTRIC DEVICES ; ROOM-TEMPERATURE ; ATOMIC LAYERS ; VOLTAGE ; MULTIFERROICS ; RESONANCE ; MEMORY ; FILMS
收录类别	SCI
语种	英语
WOS记录号	WOS:000374313000040
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/23059]
专题	上海硅酸盐研究所_无机功能材料与器件重点实验室_期刊论文
作者单位	1.Northeastern Univ, Dept Elect & Comp Engn, Boston, MA 02115 USA 2.Xi An Jiao Tong Univ, Elect Mat Res Lab, Xian 710049, Peoples R China 3.Chinese Acad Sci, Shanghai Inst Ceram, Shanghai 201800, Peoples R China 4.Northeastern Univ, Dept Chem, Boston, MA 02115 USA 5.Air Force Res Lab, Mat & Mfg Directorate, Wright Patterson AFB, OH 45433 USA
推荐引用方式 GB/T 7714	Nan, Tianxiang,Emori, Satoru,Peng, Bin,et al. Control of magnetic relaxation by electric-field-induced ferroelectric phase transition and inhomogeneous domain switching[J]. APPLIED PHYSICS LETTERS,2016,108(1).
APA	Nan, Tianxiang.,Emori, Satoru.,Peng, Bin.,Wang, Xinjun.,Hu, Zhongqiang.,...&Sun, Nian.(2016).Control of magnetic relaxation by electric-field-induced ferroelectric phase transition and inhomogeneous domain switching.APPLIED PHYSICS LETTERS,108(1).
MLA	Nan, Tianxiang,et al."Control of magnetic relaxation by electric-field-induced ferroelectric phase transition and inhomogeneous domain switching".APPLIED PHYSICS LETTERS 108.1(2016).