A Review on InGaSb Growth under Microgravity and Terrestrial Conditions Towards Future Crystal Growth Project Using Chinese Recovery Satellite SJ-10

CORC > 上海硅酸盐研究所 > 中国科学院上海硅酸盐研究所 > 结构陶瓷与复合材料工程研究中心 > 期刊论文

	A Review on InGaSb Growth under Microgravity and Terrestrial Conditions Towards Future Crystal Growth Project Using Chinese Recovery Satellite SJ-10
	Yu, Jianding 1; Liu, Yan 1; Pan, Xiuhong 1; Zhao, Hongyang 1; Kumar, Velu Nirmal 2; Arivanandhan, Mukannan 2; Momose, Yoshimi 2; Hayakawa, Yasuhiro 2; Zhang, Xingwang 3; Luo, Xinghong 4
刊名	MICROGRAVITY SCIENCE AND TECHNOLOGY
	2016-05-01
卷号	28 期号:2 页码:143-154
关键词	Microgravity Chinese recovery satellite Gravity effect Alloy semiconductor X-ray penetration method Temperature freezing method
英文摘要	The paper reviewed the previous microgravity experiment using Chinese recovery satellite, the in-situ measurement of composition profile in the solution by X-ray penetration method and homogeneous growth of InGaSb by temperature freezing method under terrestrial condition for making clear the effect of gravity on the growth of InGaSb ternary alloy semiconductor crystals. The previous experimental results showed that the shape of solid/liquid interfaces and composition profile in the solution were significantly affected by gravity. Based on the previous microgravity experimental results, experimental conditions were investigated to grow homogeneous In Ga-x Sb1-x with higher indium composition at Chinese recovery satellite SJ-10 in near future.
WOS标题词	Science & Technology ; Technology ; Physical Sciences
类目[WOS]	Engineering, Aerospace ; Thermodynamics ; Mechanics
研究领域[WOS]	Engineering ; Thermodynamics ; Mechanics
关键词[WOS]	RAY PENETRATION METHOD ; FLOATING-ZONE GROWTH ; IN-SITU OBSERVATION ; DISSOLUTION PROCESS ; MELT ; GASB ; GRAVITY ; SILICON ; SEMICONDUCTORS ; GASB/INSB/GASB
收录类别	SCI
语种	英语
WOS记录号	WOS:000376652000009
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/23076]
专题	上海硅酸盐研究所_结构陶瓷与复合材料工程研究中心_期刊论文
作者单位	1.Chinese Acad Sci, Shanghai Inst Ceram, 1295 Dingxi Rd, Shanghai 200050, Peoples R China 2.Shizuoka Univ, Elect Res Inst, 3-5-1 Johoku, Hamamatsu, Shizuoka 4328011, Japan 3.Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China 4.Chinese Acad Sci, Inst Met Res, 72 Wenhua Rd, Shenyang 110016, Liaoning, Peoples R China 5.Osaka Univ, Grad Sch Engn Sci, 1-3 Machiganeyama, Osaka 5608531, Japan 6.Japan Aerosp Explorat Agcy, Inst Space & Astronaut Sci, Chuo Ku, 3-1-1 Yoshinodai, Sagamihara, Kanagawa 2525210, Japan 7.SOKENDAI, Sch Phys Sci, Chuo Ku, 3-1-1 Yoshinodai, Sagamihara, Kanagawa 2525210, Japan
推荐引用方式 GB/T 7714	Yu, Jianding,Liu, Yan,Pan, Xiuhong,et al. A Review on InGaSb Growth under Microgravity and Terrestrial Conditions Towards Future Crystal Growth Project Using Chinese Recovery Satellite SJ-10[J]. MICROGRAVITY SCIENCE AND TECHNOLOGY,2016,28(2):143-154.
APA	Yu, Jianding.,Liu, Yan.,Pan, Xiuhong.,Zhao, Hongyang.,Kumar, Velu Nirmal.,...&Inatomi, Yuko.(2016).A Review on InGaSb Growth under Microgravity and Terrestrial Conditions Towards Future Crystal Growth Project Using Chinese Recovery Satellite SJ-10.MICROGRAVITY SCIENCE AND TECHNOLOGY,28(2),143-154.
MLA	Yu, Jianding,et al."A Review on InGaSb Growth under Microgravity and Terrestrial Conditions Towards Future Crystal Growth Project Using Chinese Recovery Satellite SJ-10".MICROGRAVITY SCIENCE AND TECHNOLOGY 28.2(2016):143-154.