Optical and electrical switching properties of VO2 thin film on MgF2 (111) substrate

CORC > 上海硅酸盐研究所 > 中国科学院上海硅酸盐研究所 > 古陶瓷与工业陶瓷工程研究中心 > 期刊论文

	Optical and electrical switching properties of VO2 thin film on MgF2 (111) substrate
	Zhou, Huaijuan 1,2; Li, Jinhua 1,2; Xin, Yunchuan 1,2; Sun, Guangyao 1,2; Bao, Shanhu 1; Jin, Ping 1,3
刊名	CERAMICS INTERNATIONAL
	2016-05-01
卷号	42 期号:6 页码:7655-7663
关键词	Grain size Electrical properties Transition metal oxides Epitaxial film
英文摘要	High-quality VO2 thin films were epitaxially deposited on MgF2 (111) single crystal substrate by means of magnetron sputtering process. The epitaxial relation of VO2 film and MgF2 (111) substrate was denoted as (210)VO2(M)//(111) MgF2 or (111) VO2(R)//(111) MgF2, which was determined by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The optical contrast between the semiconductor phase and metallic phase in the infrared region exceeds 40%, which holds great potential applications in optical switching. The energy-saving effect of VO2 films as the intelligent coating of smart window, which is commonly supposed to be one of the typical employments of optical switching performance, can be optimized by regulating the grain size of VO2 films. The resistance-temperature curves were measured by a specially customized resistance testing platform and corresponding thermochromic parameters, such as transition temperature, SMT width, activation energy, et al., were evaluated. The largest resistance ratio between the two phases exceeds 5 orders of magnitude, which can function as excellent electrical switching and may find its applications in a variety of novel switching devices. (C) 2016 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
WOS标题词	Science & Technology ; Technology
类目[WOS]	Materials Science, Ceramics
研究领域[WOS]	Materials Science
关键词[WOS]	METAL-INSULATOR-TRANSITION ; VANADIUM DIOXIDE ; PHASE-TRANSITION ; SURFACE ; TEMPERATURE ; MEMORY ; MULTILAYER ; DRIVEN ; GROWTH ; SPEED
收录类别	SCI
语种	英语
WOS记录号	WOS:000372676000135
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/23015]
专题	上海硅酸盐研究所_古陶瓷与工业陶瓷工程研究中心_期刊论文
作者单位	1.Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China 2.Univ Chinese Acad Sci, Beijing 100049, Peoples R China 3.Natl Inst Adv Ind Sci & Technol, Mat Res Inst Sustainable Dev, Nagoya, Aichi 4638560, Japan
推荐引用方式 GB/T 7714	Zhou, Huaijuan,Li, Jinhua,Xin, Yunchuan,et al. Optical and electrical switching properties of VO2 thin film on MgF2 (111) substrate[J]. CERAMICS INTERNATIONAL,2016,42(6):7655-7663.
APA	Zhou, Huaijuan,Li, Jinhua,Xin, Yunchuan,Sun, Guangyao,Bao, Shanhu,&Jin, Ping.(2016).Optical and electrical switching properties of VO2 thin film on MgF2 (111) substrate.CERAMICS INTERNATIONAL,42(6),7655-7663.
MLA	Zhou, Huaijuan,et al."Optical and electrical switching properties of VO2 thin film on MgF2 (111) substrate".CERAMICS INTERNATIONAL 42.6(2016):7655-7663.