Porous GaN photoelectrode fabricated by photo-assisted electrochemical etching using ionic liquid as etchant

CORC > 苏州纳米技术与纳米仿生研究所 > 中国科学院苏州纳米技术与纳米仿生研究所 > 学科交叉综合研究部 > 潘革波团队

	Porous GaN photoelectrode fabricated by photo-assisted electrochemical etching using ionic liquid as etchant
	Zhang, MR(张淼荣); Qin, SJ(秦双娇); Peng, HD(彭红丹); Pan, GB(潘革波)
刊名	MATERIALS LETTERS
	2016
卷号	182
通讯作者	Pan, GB(潘革波)
英文摘要	Here we report an environment-friendly approach to fabricate porous GaN photoelectrode using ionic liquid as the etchant. SEM images revealed photo-assisted electrochemical etching (PECE) has better etching effect than electrochemical etching (ECE). Furthermore, Raman spectra demonstrated porous GaN obtained by PECE has better lattice integrity than that obtained by ECE. The photocurrent of porous GaN prepared by PECE is six times and two times of planar and porous GaN fabricated by ECE, respectively. Above results indicated porous GaN obtained by PECE can be a promising photoelectrode for optoelectronic applications. (C) 2016 Elsevier B.V. All rights reserved.
关键词[WOS]	GALLIUM NITRIDE ; ELECTRODEPOSITION ; ARRAYS
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000382338400089
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/4558]
专题	苏州纳米技术与纳米仿生研究所_学科交叉综合研究部_潘革波团队
推荐引用方式 GB/T 7714	Zhang, MR,Qin, SJ,Peng, HD,et al. Porous GaN photoelectrode fabricated by photo-assisted electrochemical etching using ionic liquid as etchant[J]. MATERIALS LETTERS,2016,182.
APA	Zhang, MR,Qin, SJ,Peng, HD,&Pan, GB.(2016).Porous GaN photoelectrode fabricated by photo-assisted electrochemical etching using ionic liquid as etchant.MATERIALS LETTERS,182.
MLA	Zhang, MR,et al."Porous GaN photoelectrode fabricated by photo-assisted electrochemical etching using ionic liquid as etchant".MATERIALS LETTERS 182(2016).