Effects of thickneb on optical characteristics and strain distribution of thin-film GaN light-emitting diodes transferred to Si substrates

CORC > 苏州纳米技术与纳米仿生研究所 > 中国科学院苏州纳米技术与纳米仿生研究所 > 纳米器件及相关材料研究部 > 孙钱团队

	Effects of thickneb on optical characteristics and strain distribution of thin-film GaN light-emitting diodes transferred to Si substrates
	Li, H; Shi, YD; Feng, MX(冯美鑫); Sun, Q(孙钱); Lu, TC
刊名	APPLIED PHYSICS EXPRESS
	2016
卷号	9 期号:4
通讯作者	Lu, TC
英文摘要	We investigated the effect of device thickness on the internal quantum efficiency (IQE) of thin-film GaN light-emitting diodes (LEDs), which were grown on Si substrates and transferred to other Si substrates with reduced film thickness. It was confirmed by Raman spectroscopy and photoluminescence measurement that the compressive strain is released and the quantum-confined Stark effect (QCSE) is suppressed after reducing the thickness. The best IQE of 62.9% was reached with a large suppression of the band tilting by QCSE, from 7.9meV in the original structure to 2.4meV in the thinnest sample, and this value can compete with that of GaN-based LEDs grown on a sapphire substrate. (C) 2016 The Japan Society of Applied Physics
关键词[WOS]	MULTIPLE-QUANTUM WELLS ; PHONON DEFORMATION POTENTIALS ; VAPOR-PHASE EPITAXY ; LASER LIFT-OFF ; SAPPHIRE SUBSTRATE ; RAMAN-SCATTERING ; ALPHA-GAN ; TEMPERATURE ; NONPOLAR ; GROWTH
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000375661600007
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/4812]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_孙钱团队
推荐引用方式 GB/T 7714	Li, H,Shi, YD,Feng, MX,et al. Effects of thickneb on optical characteristics and strain distribution of thin-film GaN light-emitting diodes transferred to Si substrates[J]. APPLIED PHYSICS EXPRESS,2016,9(4).
APA	Li, H,Shi, YD,Feng, MX,Sun, Q,&Lu, TC.(2016).Effects of thickneb on optical characteristics and strain distribution of thin-film GaN light-emitting diodes transferred to Si substrates.APPLIED PHYSICS EXPRESS,9(4).
MLA	Li, H,et al."Effects of thickneb on optical characteristics and strain distribution of thin-film GaN light-emitting diodes transferred to Si substrates".APPLIED PHYSICS EXPRESS 9.4(2016).