Effects of Ultrathin AlAs Interfacial Layer on Photoluminescence Properties of GaInP Epilayer Grown on Ge

CORC > 苏州纳米技术与纳米仿生研究所 > 中国科学院苏州纳米技术与纳米仿生研究所 > 纳米器件及相关材料研究部 > SONY团队

	Effects of Ultrathin AlAs Interfacial Layer on Photoluminescence Properties of GaInP Epilayer Grown on Ge
	Chen, JX(陈俊霞); He, W; Jia, SP; Jiang, DS; Lu, SL(陆书龙); Bian, LF(边历峰); Yang, H(杨辉)
刊名	JOURNAL OF ELECTRONIC MATERIALS
	2016
卷号	45 期号:1
通讯作者	Lu, SL(陆书龙)
英文摘要	The photoluminescence (PL) properties of a GaInP epilayer with an ultrathin AlAs interfacial layer grown on Ge were investigated by time-resolved photoluminescence spectroscopy and temperature-dependent PL spectroscopy. A double-exponential PL decay with two time constants was observed, where the fast component is attributed to the emission from ordered GaInP while the slow component is related to localized states. Increased thickness of the AlAs interfacial layer resulted in an increased PL decay time due to the increased degree of order of the GaInP. Furthermore, the broad PL peak around 1.57 eV appearing in the GaInP epilayer after insertion of the AlAs layer might be attributed to phosphorus-vacancy-related deep levels.
关键词[WOS]	SOLAR-CELLS ; DEEP LEVELS ; GAAS ; GA0.52IN0.48P ; DEPENDENCE ; LIFETIMES
收录类别	SCI
语种	英语
WOS记录号	WOS:000367467800102
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/4919]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_SONY团队
推荐引用方式 GB/T 7714	Chen, JX,He, W,Jia, SP,et al. Effects of Ultrathin AlAs Interfacial Layer on Photoluminescence Properties of GaInP Epilayer Grown on Ge[J]. JOURNAL OF ELECTRONIC MATERIALS,2016,45(1).
APA	Chen, JX.,He, W.,Jia, SP.,Jiang, DS.,Lu, SL.,...&Yang, H.(2016).Effects of Ultrathin AlAs Interfacial Layer on Photoluminescence Properties of GaInP Epilayer Grown on Ge.JOURNAL OF ELECTRONIC MATERIALS,45(1).
MLA	Chen, JX,et al."Effects of Ultrathin AlAs Interfacial Layer on Photoluminescence Properties of GaInP Epilayer Grown on Ge".JOURNAL OF ELECTRONIC MATERIALS 45.1(2016).