Room-temperature wafer bonded InGaP/GaAs//InGaAsP/InGaAs four-junction solar cell grown by all-solid state molecular beam epitaxy

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	Room-temperature wafer bonded InGaP/GaAs//InGaAsP/InGaAs four-junction solar cell grown by all-solid state molecular beam epitaxy
	Dai, P(代盼); Lu, SL(陆书龙); Uchida, SR; Ji, L(季莲); Wu, YY(吴渊渊); Tan, M(谭明); Bian, LF(边历峰); Yang, H(杨辉)
刊名	APPLIED PHYSICS EXPRESS
	2016
卷号	9 期号:1
通讯作者	Lu, SL(陆书龙) ; Uchida, SR
英文摘要	An InGaP/GaAs tandem cell on a GaAs substrate and an InGaAsP/InGaAs tandem cell on an InP substrate were grown separately by all-solid-state molecular beam epitaxy. A room-temperature direct wafer-bonding technique was used to integrate these subcells into an InGaP/GaAs//InGaAsP/InGaAs wafer-bonded solar cell, which resulted in an abrupt interface with low resistance and high optical transmission. The current-matching design for the base layer thickness of each cell was investigated. The resulting efficiency of the four-junction solar cell was 42.0% at 230 suns, which demonstrates the great potential of the room-temperature wafer-bonding technique to achieve high conversion efficiency for cells with four or more junctions. (C) 2016 The Japan Society of Applied Physics
关键词[WOS]	EFFICIENCY ; DIFFUSION ; JUNCTION ; GAAS ; SI
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000370161900025
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/4900]
专题	苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_SONY团队
推荐引用方式 GB/T 7714	Dai, P,Lu, SL,Uchida, SR,et al. Room-temperature wafer bonded InGaP/GaAs//InGaAsP/InGaAs four-junction solar cell grown by all-solid state molecular beam epitaxy[J]. APPLIED PHYSICS EXPRESS,2016,9(1).
APA	Dai, P.,Lu, SL.,Uchida, SR.,Ji, L.,Wu, YY.,...&Yang, H.(2016).Room-temperature wafer bonded InGaP/GaAs//InGaAsP/InGaAs four-junction solar cell grown by all-solid state molecular beam epitaxy.APPLIED PHYSICS EXPRESS,9(1).
MLA	Dai, P,et al."Room-temperature wafer bonded InGaP/GaAs//InGaAsP/InGaAs four-junction solar cell grown by all-solid state molecular beam epitaxy".APPLIED PHYSICS EXPRESS 9.1(2016).