Effects of patterned substrate on quality of high indium content InGaN grown by molecular beam epitaxy (MBE) | |
Li, Baoji; Wu, Yuanyuan; Lu, Shulong(陆书龙); Zhang, Jijun | |
刊名 | Cailiao Daobao/Materials Review |
2016 | |
通讯作者 | Lu, Shulong(陆书龙) |
收录类别 | EI |
语种 | 英语 |
内容类型 | 期刊论文 |
源URL | [http://ir.sinano.ac.cn/handle/332007/4818] |
专题 | 苏州纳米技术与纳米仿生研究所_纳米器件及相关材料研究部_SONY团队 |
推荐引用方式 GB/T 7714 | Li, Baoji,Wu, Yuanyuan,Lu, Shulong,et al. Effects of patterned substrate on quality of high indium content InGaN grown by molecular beam epitaxy (MBE)[J]. Cailiao Daobao/Materials Review,2016. |
APA | Li, Baoji,Wu, Yuanyuan,Lu, Shulong,&Zhang, Jijun.(2016).Effects of patterned substrate on quality of high indium content InGaN grown by molecular beam epitaxy (MBE).Cailiao Daobao/Materials Review. |
MLA | Li, Baoji,et al."Effects of patterned substrate on quality of high indium content InGaN grown by molecular beam epitaxy (MBE)".Cailiao Daobao/Materials Review (2016). |
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