Te-Doped Black Phosphorus Field-Effect Transistors

	Te-Doped Black Phosphorus Field-Effect Transistors
	Yang, Bingchao; Wan, Bensong; Zhou, Qionghua; Wang, Yue; Hu, Wentao; Lv, Weiming; Chen, Qian; Zeng, Zhongming(曾中明); Wen, Fusheng; Xiang, Jianyong
刊名	Advanced Materials
	2016
通讯作者	Liu, ZY ; Zeng, ZM(曾中明) ; Wang, JL ; Wang, WH
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000391174600019
内容类型	期刊论文
源URL	[http://ir.sinano.ac.cn/handle/332007/4606]
专题	苏州纳米技术与纳米仿生研究所_纳米加工公共平台
推荐引用方式 GB/T 7714	Yang, Bingchao,Wan, Bensong,Zhou, Qionghua,et al. Te-Doped Black Phosphorus Field-Effect Transistors[J]. Advanced Materials,2016.
APA	Yang, Bingchao.,Wan, Bensong.,Zhou, Qionghua.,Wang, Yue.,Hu, Wentao.,...&Liu, Zhongyuan.(2016).Te-Doped Black Phosphorus Field-Effect Transistors.Advanced Materials.
MLA	Yang, Bingchao,et al."Te-Doped Black Phosphorus Field-Effect Transistors".Advanced Materials (2016).