Carrier leakage effect on efficiency droop in InGaN/GaN light-emitting diodes

	Carrier leakage effect on efficiency droop in InGaN/GaN light-emitting diodes
	Yang Huang ; Zhiqiang Liu ; Xiaoyan Yi ; Yao Guo ; Shaoteng Wu ; Guodong Yuan ; Junxi Wang ; Guohong Wang ; Jinmin Li
刊名	modern physics letters b
	2016
卷号	20 页码:1650221
学科主题	半导体器件
收录类别	SCI
公开日期	2017-03-16
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/28083]
专题	半导体研究所_中科院半导体照明研发中心
推荐引用方式 GB/T 7714	Yang Huang,Zhiqiang Liu,Xiaoyan Yi,et al. Carrier leakage effect on efficiency droop in InGaN/GaN light-emitting diodes[J]. modern physics letters b,2016,20:1650221.
APA	Yang Huang.,Zhiqiang Liu.,Xiaoyan Yi.,Yao Guo.,Shaoteng Wu.,...&Jinmin Li.(2016).Carrier leakage effect on efficiency droop in InGaN/GaN light-emitting diodes.modern physics letters b,20,1650221.
MLA	Yang Huang,et al."Carrier leakage effect on efficiency droop in InGaN/GaN light-emitting diodes".modern physics letters b 20(2016):1650221.