Impact of dual field plates on drain current degradation in InAlN/AlN/GaN HEMTs | |
Wei Li ; Quan Wang ; Xiangmi Zhan ; Junda Yan ; Lijuan Jiang ; Haibo Yin ; Jiamin Gong ; Xiaoliang Wang ; Fengqi Liu ; Baiquan Li ; Zhanguo Wang | |
刊名 | semiconductor science and technology |
2016 | |
卷号 | 31期号:12页码:125003 |
学科主题 | 半导体材料 |
收录类别 | SCI |
公开日期 | 2017-03-10 |
内容类型 | 期刊论文 |
源URL | [http://ir.semi.ac.cn/handle/172111/27761] |
专题 | 半导体研究所_中科院半导体材料科学重点实验室 |
推荐引用方式 GB/T 7714 | Wei Li,Quan Wang,Xiangmi Zhan,et al. Impact of dual field plates on drain current degradation in InAlN/AlN/GaN HEMTs[J]. semiconductor science and technology,2016,31(12):125003. |
APA | Wei Li.,Quan Wang.,Xiangmi Zhan.,Junda Yan.,Lijuan Jiang.,...&Zhanguo Wang.(2016).Impact of dual field plates on drain current degradation in InAlN/AlN/GaN HEMTs.semiconductor science and technology,31(12),125003. |
MLA | Wei Li,et al."Impact of dual field plates on drain current degradation in InAlN/AlN/GaN HEMTs".semiconductor science and technology 31.12(2016):125003. |
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