Influences of annealing on structural and compositional properties of Al2O3 thin films grown on 4H–SiC by atomic layer deposition

	Influences of annealing on structural and compositional properties of Al2O3 thin films grown on 4H–SiC by atomic layer deposition
	Li-Xin Tian ; Feng Zhang ; Zhan-Wei Shen ; Guo-Guo Yan ; Xing-Fang Liu ; Wan-Shun Zhao ; Lei Wang ; Guo-Sheng Sun ; Yi-Ping Zeng
刊名	Chinese Physics B
	2016
卷号	25 期号:12 页码:128104
学科主题	半导体材料
收录类别	SCI
公开日期	2017-03-10
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/27755]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Li-Xin Tian,Feng Zhang,Zhan-Wei Shen,et al. Influences of annealing on structural and compositional properties of Al2O3 thin films grown on 4H–SiC by atomic layer deposition[J]. Chinese Physics B,2016,25(12):128104.
APA	Li-Xin Tian.,Feng Zhang.,Zhan-Wei Shen.,Guo-Guo Yan.,Xing-Fang Liu.,...&Yi-Ping Zeng.(2016).Influences of annealing on structural and compositional properties of Al2O3 thin films grown on 4H–SiC by atomic layer deposition.Chinese Physics B,25(12),128104.
MLA	Li-Xin Tian,et al."Influences of annealing on structural and compositional properties of Al2O3 thin films grown on 4H–SiC by atomic layer deposition".Chinese Physics B 25.12(2016):128104.