Molecular Beam Epitaxy of Zero Lattice-Mismatch InAs/GaSb Type-II Superlattice

	Molecular Beam Epitaxy of Zero Lattice-Mismatch InAs/GaSb Type-II Superlattice
	Hai-Long Yu ; Hao-Yue Wu ; Hai-Jun Zhu ; Guo-Feng Song ; Yun Xu
刊名	chinese physics letters
	2016
卷号	33 期号:12 页码:128103
学科主题	半导体材料
收录类别	SCI
公开日期	2017-03-16
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/27913]
专题	半导体研究所_纳米光电子实验室
推荐引用方式 GB/T 7714	Hai-Long Yu,Hao-Yue Wu,Hai-Jun Zhu,et al. Molecular Beam Epitaxy of Zero Lattice-Mismatch InAs/GaSb Type-II Superlattice[J]. chinese physics letters,2016,33(12):128103.
APA	Hai-Long Yu,Hao-Yue Wu,Hai-Jun Zhu,Guo-Feng Song,&Yun Xu.(2016).Molecular Beam Epitaxy of Zero Lattice-Mismatch InAs/GaSb Type-II Superlattice.chinese physics letters,33(12),128103.
MLA	Hai-Long Yu,et al."Molecular Beam Epitaxy of Zero Lattice-Mismatch InAs/GaSb Type-II Superlattice".chinese physics letters 33.12(2016):128103.