Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs

	Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs
	J. Yang ; D.G. Zhao ; D.S. Jiang ; P. Chen ; J.J. Zhu ; Z.S. Liu ; J.P. Liu ; L.Q. Zhang ; H. Yang ; Y.T. Zhang ; G.T. Du
刊名	journal of alloys and compounds
	2016
卷号	681 页码:522-526
学科主题	光电子学
收录类别	SCI
公开日期	2017-03-10
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/27862]
专题	半导体研究所_光电子研究发展中心
推荐引用方式 GB/T 7714	J. Yang,D.G. Zhao,D.S. Jiang,et al. Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs[J]. journal of alloys and compounds,2016,681:522-526.
APA	J. Yang.,D.G. Zhao.,D.S. Jiang.,P. Chen.,J.J. Zhu.,...&G.T. Du.(2016).Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs.journal of alloys and compounds,681,522-526.
MLA	J. Yang,et al."Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs".journal of alloys and compounds 681(2016):522-526.