Very high quantum efficiency in InAs/GaSb superlattice for very long wavelength detection with cutoff of 21 µm

	Very high quantum efficiency in InAs/GaSb superlattice for very long wavelength detection with cutoff of 21 µm
	Dongwei Jiang ; Wei Xiang ; Fengyun Guo ; Hongyue Hao ; Xi Han ; Xiaochao Li ; Guowei Wang ; Yingqiang Xu ; Qingjiang Yu ; Zhichuan Niu
刊名	applied physics letters
	2016
卷号	108 期号:12 页码:121110
学科主题	半导体物理
收录类别	SCI
公开日期	2017-03-10
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/27829]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Dongwei Jiang,Wei Xiang,Fengyun Guo,et al. Very high quantum efficiency in InAs/GaSb superlattice for very long wavelength detection with cutoff of 21 µm[J]. applied physics letters,2016,108(12):121110.
APA	Dongwei Jiang.,Wei Xiang.,Fengyun Guo.,Hongyue Hao.,Xi Han.,...&Zhichuan Niu.(2016).Very high quantum efficiency in InAs/GaSb superlattice for very long wavelength detection with cutoff of 21 µm.applied physics letters,108(12),121110.
MLA	Dongwei Jiang,et al."Very high quantum efficiency in InAs/GaSb superlattice for very long wavelength detection with cutoff of 21 µm".applied physics letters 108.12(2016):121110.