InAs homoepitaxy and InAs/AlSb/GaSb resonant interband tunneling diodes on InAs substrate

	InAs homoepitaxy and InAs/AlSb/GaSb resonant interband tunneling diodes on InAs substrate
	Wei Xiang ; Guowei Wang ; Hongyue Hao ; Yongping Liao ; Xi Han ; Lichun Zhang ; Yingqiang Xu ; Zhengwei Ren ; Haiqiao Ni ; Zhenhong He ; Zhichuan Niu
刊名	journal of crystal growth
	2016
卷号	443 页码:85-89
学科主题	半导体物理
收录类别	SCI
公开日期	2017-03-16
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/27999]
专题	半导体研究所_半导体超晶格国家重点实验室
推荐引用方式 GB/T 7714	Wei Xiang,Guowei Wang,Hongyue Hao,et al. InAs homoepitaxy and InAs/AlSb/GaSb resonant interband tunneling diodes on InAs substrate[J]. journal of crystal growth,2016,443:85-89.
APA	Wei Xiang.,Guowei Wang.,Hongyue Hao.,Yongping Liao.,Xi Han.,...&Zhichuan Niu.(2016).InAs homoepitaxy and InAs/AlSb/GaSb resonant interband tunneling diodes on InAs substrate.journal of crystal growth,443,85-89.
MLA	Wei Xiang,et al."InAs homoepitaxy and InAs/AlSb/GaSb resonant interband tunneling diodes on InAs substrate".journal of crystal growth 443(2016):85-89.