Excess Carrier Lifetime Improvement in c-Si Solar Cells by YAG:Ce3+-Yb3+ | |
Talib Hussain1,2,3; Hui-Qi Ye1,2; Dong Xiao1,2,3 | |
刊名 | Chinese Physics Letters |
2016-05 | |
卷号 | 33期号:5页码:058801-1-4 |
中文摘要 | |
英文摘要 |
Ce3+-Yb3+ doped Y3A15O12 (YAG) is a luminescent down-conversion material which could convert visible photons to near infrared photons. In this work, YAG:Ce3+-Yb3+ is applied on the front surface of mass-produced mono crystalline Si solar cells. For the coated cells, the external quantum efficiency from the visible to the near infrared is improved, and the energy conversion efficiency enhances from 11.70% to 12.2% under AM1.5G. Furthermore, the phosphor down-conversion effect on the solar cell is characterized by the microwave detected photoconductivity technique on the n-type silicon wafer under the 977nm excitation. The down-conversion materials improve the average excess carrier lifetime from 22.5us to 24.2us and the average surface recombination velocity reduces from 424.5cm/s to 371.6 cm/s, which reveal the significant reduction in excess carrier recombination by the phosphors. |
学科主题 | 天文技术与方法 |
语种 | 英语 |
内容类型 | 期刊论文 |
源URL | [http://ir.niaot.ac.cn/handle/114a32/1353] |
专题 | 南京天文光学技术研究所_中科院南京天光所知识成果_期刊论文 南京天文光学技术研究所_中科院天文光学技术重点实验室_期刊论文 |
作者单位 | 1.南京天文光学技术研究所 2.中国科学院天文光学重点实验室 3.中国科学院大学 |
推荐引用方式 GB/T 7714 | Talib Hussain,Hui-Qi Ye,Dong Xiao. Excess Carrier Lifetime Improvement in c-Si Solar Cells by YAG:Ce3+-Yb3+[J]. Chinese Physics Letters,2016,33(5):058801-1-4. |
APA | Talib Hussain,Hui-Qi Ye,&Dong Xiao.(2016).Excess Carrier Lifetime Improvement in c-Si Solar Cells by YAG:Ce3+-Yb3+.Chinese Physics Letters,33(5),058801-1-4. |
MLA | Talib Hussain,et al."Excess Carrier Lifetime Improvement in c-Si Solar Cells by YAG:Ce3+-Yb3+".Chinese Physics Letters 33.5(2016):058801-1-4. |
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