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	Properties of ferroelectric thin film capacitor for embedded passive applications
	Ning Zhao; Lixi Wan; Shuhui Yu
	2011
会议名称	2011 12th International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2011
会议地点	Shanghai, China
英文摘要	BaTiO3/Ba0.6Sr0.4TiO3/SrTiO3 (BT/B ST/ST, as one periodic structure) multilayer thin films were deposited on Pt/Ti/SiO2/Si substrates by a sol-gel method. Platinum electrodes were then patterned on the films by sputtering and lithographic process to form metal-ferroelectric-metal (MFM) capacitors. The multilayer thin films were crack free, compact and crystallized in perovskite structure. The crystallization temperature was between 600°C and 650°C. The dielectric constant of the multilayer films was significantly higher than that of individual uniform films of BaTiO3, SrTiO3 or Bao6Sro4TiO3 of similar thickness. The multilayer thin films showed excellent dielectric and electric properties that make them promising candidates for the dielectric layer of embedded capacitor in package substrate in a discrete format. Within the entire test range of frequencies, the capacitance of all samples remained at the level of several nF. The breakdown voltage of the MFM capacitors was measured to be greater than 27 V.
收录类别	EI
语种	英语
内容类型	会议论文
源URL	[http://ir.siat.ac.cn:8080/handle/172644/3376]
专题	深圳先进技术研究院_集成所
作者单位	2011
推荐引用方式 GB/T 7714	Ning Zhao,Lixi Wan,Shuhui Yu. Properties of ferroelectric thin film capacitor for embedded passive applications[C]. 见:2011 12th International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2011. Shanghai, China.

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