Lateral Built-In Potential of Monolayer MoS2-WS2 In-Plane Heterostructures by a Shortcut Growth Strategy

	Lateral Built-In Potential of Monolayer MoS2-WS2 In-Plane Heterostructures by a Shortcut Growth Strategy
	Kun Chen; Xi Wan; Weiguang Xie; Jinxiu Wen; Zhiwen Kang; Xiaoliang Zeng; Huanjun Chen; Jianbin Xu
刊名	ADVANCED MATERIALS
	2015
英文摘要	Lateral WS2-MoS2 heterostructures are synthesized by a shortcut one-step growth recipe with low-cost and soluble salts. The 2D spatial distributions ofthe built-in potential and the related electric field of the lateral WS2-MoS2 heterostructure are quantitatively analyzed by scanning Kelvin probe force microscopy revealing the fundamental attributes of the lateral heterostructure devices.
收录类别	SCI
原文出处	http://onlinelibrary.wiley.com/doi/10.1002/adma.201502375/full
语种	英语
内容类型	期刊论文
源URL	[http://ir.siat.ac.cn:8080/handle/172644/6663]
专题	深圳先进技术研究院_集成所
作者单位	ADVANCED MATERIALS
推荐引用方式 GB/T 7714	Kun Chen,Xi Wan,Weiguang Xie,et al. Lateral Built-In Potential of Monolayer MoS2-WS2 In-Plane Heterostructures by a Shortcut Growth Strategy[J]. ADVANCED MATERIALS,2015.
APA	Kun Chen.,Xi Wan.,Weiguang Xie.,Jinxiu Wen.,Zhiwen Kang.,...&Jianbin Xu.(2015).Lateral Built-In Potential of Monolayer MoS2-WS2 In-Plane Heterostructures by a Shortcut Growth Strategy.ADVANCED MATERIALS.
MLA	Kun Chen,et al."Lateral Built-In Potential of Monolayer MoS2-WS2 In-Plane Heterostructures by a Shortcut Growth Strategy".ADVANCED MATERIALS (2015).