Electronic Properties of MoS2-WS2 Heterostructures Synthesized with Two-Step Lateral Epitaxial Strategy

	Electronic Properties of MoS2-WS2 Heterostructures Synthesized with Two-Step Lateral Epitaxial Strategy
	Kun Chen; Xi Wan; Jinxiu Wen; Weiguang Xie; Zhiwen Kang; Xiaoliang Zeng; Huanjun Chen; Jian-Bin Xu
刊名	ACS NANO
	2015
英文摘要	Formation of heterojunctions of transition metal dichalcogenides (TMDs) stimulates wide interest in new device physics and technology by tuning optical and electronic properties of TMDs. TMDs heterojunctions are of scientific and technological interest for exploration of next generation flexible electronics. Herein, we report on a two-step epitaxial ambient-pressure CVD technique to construct in-plane MoS2-WS2 heterostructures. The technique has the potential to artificially control the shape and structure of heterostructures or even to be more potentially extendable to growth of TMD superlattice than that of one-step CVD technique. Moreover, the unique MX2 heterostructure with monolayer MoS2 core wrapped by multilayer WS2 is obtained by the technique, which is entirely different from MX2 heterostructures synthesized by existing one-step CVD technique. Transmission electron microscopy, Raman and photoluminescence mapping studies reveal that the obtained heterostructure nanosheets clearly exhibit the modulated structural and opticalproperties. Electrical transport studies demonstrate that the special MoS2 (monolayer)/WS2 (multilayer) heterojunctions serve as intrinsic lateral p-n diodes and unambiguously show the photovoltaic effect. On the basis of this special heterostructure, depletion-layer width and built-in potential, as well as the built-in electric field distribution, are obtained by KPFM measurement, which are the essential parameters for TMD optoelectronic devices. Withfurther development in future studies, this growth approach is envisaged to bring about a new growth platform for two-dimensional atomic crystals and to create unprecedented architectures therefor.
收录类别	SCI
原文出处	http://pubs.acs.org/doi/abs/10.1021/acsnano.5b03188
语种	英语
内容类型	期刊论文
源URL	[http://ir.siat.ac.cn:8080/handle/172644/6660]
专题	深圳先进技术研究院_集成所
作者单位	ACS NANO
推荐引用方式 GB/T 7714	Kun Chen,Xi Wan,Jinxiu Wen,et al. Electronic Properties of MoS2-WS2 Heterostructures Synthesized with Two-Step Lateral Epitaxial Strategy[J]. ACS NANO,2015.
APA	Kun Chen.,Xi Wan.,Jinxiu Wen.,Weiguang Xie.,Zhiwen Kang.,...&Jian-Bin Xu.(2015).Electronic Properties of MoS2-WS2 Heterostructures Synthesized with Two-Step Lateral Epitaxial Strategy.ACS NANO.
MLA	Kun Chen,et al."Electronic Properties of MoS2-WS2 Heterostructures Synthesized with Two-Step Lateral Epitaxial Strategy".ACS NANO (2015).