Minimum Thermal Conductivity in Weak Topological Insulators with Bismuth-Based Stack Structure

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	Minimum Thermal Conductivity in Weak Topological Insulators with Bismuth-Based Stack Structure
	Wei, Ping 1,2; Yang, Jiong 1,3; Guo, Liang 4,5; Wang, Shanyu 1; Wu, Lihua 1,3; Xu, Xianfan 4,5; Zhao, Wenyu 2; Zhang, Qingjie 2; Zhang, Wenqing 3,6; Dresselhaus, Mildred S.7
刊名	ADVANCED FUNCTIONAL MATERIALS
	2016-08-02
卷号	26 期号:29 页码:5360-5367
英文摘要	Contrary to the conventional belief that the consideration for topological insulators (TIs) as potential thermoelectrics is due to their excellent electrical properties benefiting from the topological surface states, this work shows that the 3D weak TIs, formed by alternating stacks of quantum spin Hall layers and normal insulator (NI) layers, can also be decent thermoelectrics because of their focus on minimum thermal conductivity. The minimum lattice thermal conductivity is experimentally confirmed in Bi14Rh3I9 and theoretically predicted for Bi2TeI at room temperature. It is revealed that the topologically "trivial" NI layers play a surprisingly critical role in hindering phonon propagation. The weak bonding in the NI layers gives rise to significantly low sound velocity, and the localized low-frequency vibrations of the NI layers cause strong acoustic-optical interactions and lattice anharmonicity. All these features are favorable for the realization of exceptionally low lattice thermal conductivity, and therefore present remarkable opportunities for developing high-performance thermoelectrics in weak TIs.
WOS标题词	Science & Technology ; Physical Sciences ; Technology
类目[WOS]	Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
研究领域[WOS]	Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
关键词[WOS]	AUGMENTED-WAVE METHOD ; SINGLE DIRAC CONE ; THERMOELECTRIC-MATERIALS ; BI2TE3 ; PERFORMANCE ; EFFICIENCY ; CRYSTALS ; BEHAVIOR ; SURFACE ; ORIGIN
收录类别	SCI
语种	英语
WOS记录号	WOS:000382548000021
内容类型	期刊论文
源URL	[http://ir.sic.ac.cn/handle/331005/22126]
专题	上海硅酸盐研究所_高性能陶瓷和超微结构国家重点实验室_期刊论文
作者单位	1.Univ Washington, Dept Mat Sci & Engn, Seattle, WA 98195 USA 2.Wuhan Univ Technol, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China 3.Shanghai Univ, Mat Genome Inst, Shanghai 200444, Peoples R China 4.Purdue Univ, Sch Mech Engn, W Lafayette, IN 47907 USA 5.Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA 6.Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, Shanghai 200050, Peoples R China 7.MIT, 77 Massachusetts Ave, Cambridge, MA 02139 USA
推荐引用方式 GB/T 7714	Wei, Ping,Yang, Jiong,Guo, Liang,et al. Minimum Thermal Conductivity in Weak Topological Insulators with Bismuth-Based Stack Structure[J]. ADVANCED FUNCTIONAL MATERIALS,2016,26(29):5360-5367.
APA	Wei, Ping.,Yang, Jiong.,Guo, Liang.,Wang, Shanyu.,Wu, Lihua.,...&Yang, Jihui.(2016).Minimum Thermal Conductivity in Weak Topological Insulators with Bismuth-Based Stack Structure.ADVANCED FUNCTIONAL MATERIALS,26(29),5360-5367.
MLA	Wei, Ping,et al."Minimum Thermal Conductivity in Weak Topological Insulators with Bismuth-Based Stack Structure".ADVANCED FUNCTIONAL MATERIALS 26.29(2016):5360-5367.