A new kind of vertically aligned field emission transistor with a cylindrical vacuum channel | |
Shen, Zhihua1; Wang, Xiao1; Wu, Shengli1; Tian, Jinshou2![]() | |
刊名 | vacuum
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2017-03-01 | |
卷号 | 137页码:163-168 |
关键词 | Finite integration technique (FIT) Vacuum channel Field emission transistor |
ISSN号 | 0042-207x |
通讯作者 | wu, shengli (slwu@mail.xjtu.edu.cn) |
产权排序 | 2 |
英文摘要 | this study investigated a vertically aligned field emission transistor with a cylindrical vacuum channel. the channel length of this proposed transistor can be precisely controlled and easily fabricated to be comparable to the mean free path of electrons in air so that the device can operate in the air without performance degradation. in the study, this vacuum transistor showed a low threshold voltage (1.2 v, 2.2 v, and 3.3 v) with a gate dielectric thickness of 10 nm, 15 nm, and 20 nm and a subthreshold slope of 1.1 v/dec. it was found that the vacuum channel radius should be no less than 20 nm, otherwise, severe performance degradation will appear due to the effect of the gate shield (leading to reduction of the anode current) and electron collision events with the dielectric layer (presenting reliability issues). this kind of vacuum transistor may have wide applications in extreme conditions such as high temperature and intense irradiation. (c) 2017 elsevier ltd. all rights reserved. |
学科主题 | electricity: basic concepts and phenomena ; semiconductor devices and integrated circuits |
WOS标题词 | science & technology ; technology ; physical sciences |
类目[WOS] | materials science, multidisciplinary ; physics, applied |
研究领域[WOS] | materials science ; physics |
关键词[WOS] | work function ; breakdown |
收录类别 | SCI ; EI |
语种 | 英语 |
WOS记录号 | WOS:000394070200024 |
内容类型 | 期刊论文 |
源URL | [http://ir.opt.ac.cn/handle/181661/28600] ![]() |
专题 | 条纹相机工程中心 |
作者单位 | 1.Xi An Jiao Tong Univ, Minist Educ, Key Lab Phys Elect & Devices, Xian 710049, Peoples R China 2.Xian Inst Opt & Precis Mech CAS, State Key Lab Transient Opt & Photon, Xian 710119, Peoples R China |
推荐引用方式 GB/T 7714 | Shen, Zhihua,Wang, Xiao,Wu, Shengli,et al. A new kind of vertically aligned field emission transistor with a cylindrical vacuum channel[J]. vacuum,2017,137:163-168. |
APA | Shen, Zhihua,Wang, Xiao,Wu, Shengli,&Tian, Jinshou.(2017).A new kind of vertically aligned field emission transistor with a cylindrical vacuum channel.vacuum,137,163-168. |
MLA | Shen, Zhihua,et al."A new kind of vertically aligned field emission transistor with a cylindrical vacuum channel".vacuum 137(2017):163-168. |
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