Benzobisthiadiazole-alt-bithiazole copolymers with deep HOMO levels for good-performance field-effect transistors with air stability and a high on/off ratio

	Benzobisthiadiazole-alt-bithiazole copolymers with deep HOMO levels for good-performance field-effect transistors with air stability and a high on/off ratio
	Zhang, Chen 1; Zhang, Ji 2; Zeng, Weixuan 1; Zheng, Naihang 2; Li, Wei 1; Gao, Wei 1; Yu, Gui 2; Yang, Chuluo 1
刊名	POLYMER CHEMISTRY
	2016
卷号	7 期号:16 页码:2808-2814
英文摘要	Benzobisthiadiazole (BBT) is a widely used building block for its high electron affinity and planar configuration. BBT-based copolymers have resulted in good performance of organic field-effect transistors (OFETs). However, devices of these polymers are usually unstable in ambient air since most of these BBT-based polymers have high-lying HOMO energy levels (-4.3 to -4.8 eV). Besides, the field-effect transistors (FET) of BBT-based polymers show relatively low on/off ratios (10(2)-10(4)). As a result, it is very attractive to couple BBT with an electron-deficient block to construct new polymers with air stability. 2,2'-Bithiazole (BTz) is a potential building block due to its electron deficiency and trans-planar configuration. But incorporating 2,2'-bithiazole into polymers still remains a challenge since the organic tin compound of bithiazole is difficult to synthesize. In this article, we successfully prepared 5,5'-bis(trimethylstannyl)-2,2'-bithiazole by a three-step method and then synthesized two benzobisthiadiazole-alt-bithiazole copolymers (P1 and P2). Both P1 and P2 have a low-lying HOMO energy level (-5.3 eV), leading to air stability. Moreover the resulting FETs exhibit a very high on/off ratio (10(5)-10(7)) and a good hole mobility of up to 0.11 cm(2) V-1 s(-1), which represents a significant advancement for BBT-containing polymers.
收录类别	SCI
语种	英语
内容类型	期刊论文
源URL	[http://ir.iccas.ac.cn/handle/121111/36107]
专题	化学研究所_有机固体实验室
作者单位	1.Wuhan Univ, Dept Chem, Hubei Key Lab Organ & Polymer Optoelect Mat, Hubei Collaborat Innovat Ctr Adv Organ Chem Mat, Wuhan 430072, Peoples R China 2.Chinese Acad Sci, Inst Chem, Beijing Natl Lab Mol Sci, Beijing 100080, Peoples R China
推荐引用方式 GB/T 7714	Zhang, Chen,Zhang, Ji,Zeng, Weixuan,et al. Benzobisthiadiazole-alt-bithiazole copolymers with deep HOMO levels for good-performance field-effect transistors with air stability and a high on/off ratio[J]. POLYMER CHEMISTRY,2016,7(16):2808-2814.
APA	Zhang, Chen.,Zhang, Ji.,Zeng, Weixuan.,Zheng, Naihang.,Li, Wei.,...&Yang, Chuluo.(2016).Benzobisthiadiazole-alt-bithiazole copolymers with deep HOMO levels for good-performance field-effect transistors with air stability and a high on/off ratio.POLYMER CHEMISTRY,7(16),2808-2814.
MLA	Zhang, Chen,et al."Benzobisthiadiazole-alt-bithiazole copolymers with deep HOMO levels for good-performance field-effect transistors with air stability and a high on/off ratio".POLYMER CHEMISTRY 7.16(2016):2808-2814.