Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High-Performance 2D Field Effect Transistors

	Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High-Performance 2D Field Effect Transistors
	Zou, Xuming 1,2; Huang, Chun-Wei 3; Wang, Lifeng 4; Yin, Long-Jing 5; Li, Wenqing 1,2; Wang, Jingli 1,2; Wu, Bin 4; Liu, Yunqi 4; Yao, Qian 6; Jiang, Changzhong 1,2
刊名	ADVANCED MATERIALS
	2016-03-09
卷号	28 期号:10 页码:2062-+
英文摘要	A unique design of a hexagonal boron nitride (h-BN)/HfO2 dielectric heterostructure stack is demonstrated, with few-layer h-BN to alleviate the surface optical phonon scattering, followed by high-kappa HfO2 deposition to suppress Coulombic impurity scattering so that high-performance top-gated two-dimensional semiconductor transistors are achieved. Furthermore, this dielectric stack can also be extended to GaN-based transistors to enhance their performance.
收录类别	SCI
语种	英语
内容类型	期刊论文
源URL	[http://ir.iccas.ac.cn/handle/121111/35929]
专题	化学研究所_有机固体实验室
作者单位	1.Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China 2.Wuhan Univ, Key Lab Artificial Micro & Nanostruct, Minist Educ, Wuhan 430072, Peoples R China 3.Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 30010, Taiwan 4.Chinese Acad Sci, Inst Chem, Key Lab Organ Solids, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China 5.Beijing Normal Univ, Ctr Adv Quantum Studies, Dept Phys, Beijing 100875, Peoples R China 6.Xiamen Univ, Dept Phys, Xiamen 361005, Peoples R China 7.City Univ Hong Kong, Dept Phys & Mat Sci, Tat Chee Ave, Kowloon, Hong Kong, Peoples R China
推荐引用方式 GB/T 7714	Zou, Xuming,Huang, Chun-Wei,Wang, Lifeng,et al. Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High-Performance 2D Field Effect Transistors[J]. ADVANCED MATERIALS,2016,28(10):2062-+.
APA	Zou, Xuming.,Huang, Chun-Wei.,Wang, Lifeng.,Yin, Long-Jing.,Li, Wenqing.,...&Liao, Lei.(2016).Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High-Performance 2D Field Effect Transistors.ADVANCED MATERIALS,28(10),2062-+.
MLA	Zou, Xuming,et al."Dielectric Engineering of a Boron Nitride/Hafnium Oxide Heterostructure for High-Performance 2D Field Effect Transistors".ADVANCED MATERIALS 28.10(2016):2062-+.