Reversible Resistance Switching Effect in Amorphous Ge1Sb4Te7 Thin Films without Phase Transformation

CORC > 上海光学精密机械研究所 > 中国科学院上海光学精密机械研究所 > 高密度光存储技术实验室

	Reversible Resistance Switching Effect in Amorphous Ge1Sb4Te7 Thin Films without Phase Transformation
	Sun Hua-Jun ; Hou Li-Song ; Wu Yi-Qun ; Tang Xiao-Dong
刊名	chin. phys. lett.
	2009
卷号	26 期号:2 页码:24203
关键词	CHANGE MEMORIES OPTICAL MEMORY ELECTROLYTES STATE METAL
ISSN号	0256-307x
中文摘要	we demonstrate a reversible resistance switching effect that does not rely on amorphous-crystalline phase transformation in a nanoscale capacitor-like cell using ge1sb4te7 films as the working material. the polarity and amplitude of the applied electric voltage switches the cell resistance between low- and high-resistance states, as revealed in the current-voltage characteristics of the film by conductive atomic force microscopy (cafm). this reversible set/reset switching effect is induced by voltage pulses and their polarity. the change of electrical resistance due to the switching effect is approximately two orders of magnitude.
学科主题	光存储
资助信息	national basic research programme of china [2007cb935402]; national natural science foundation of china [50502036, 60644002]
语种	英语
WOS记录号	WOS:000263243800033
公开日期	2009-09-22
内容类型	期刊论文
源URL	[http://ir.siom.ac.cn/handle/181231/4083]
专题	上海光学精密机械研究所_高密度光存储技术实验室
推荐引用方式 GB/T 7714	Sun Hua-Jun,Hou Li-Song,Wu Yi-Qun,et al. Reversible Resistance Switching Effect in Amorphous Ge1Sb4Te7 Thin Films without Phase Transformation[J]. chin. phys. lett.,2009,26(2):24203.
APA	Sun Hua-Jun,Hou Li-Song,Wu Yi-Qun,&Tang Xiao-Dong.(2009).Reversible Resistance Switching Effect in Amorphous Ge1Sb4Te7 Thin Films without Phase Transformation.chin. phys. lett.,26(2),24203.
MLA	Sun Hua-Jun,et al."Reversible Resistance Switching Effect in Amorphous Ge1Sb4Te7 Thin Films without Phase Transformation".chin. phys. lett. 26.2(2009):24203.