Spectrum Analysis of 2-D Plasmon in GaN-Based High Electron Mobility Transistors

	Spectrum Analysis of 2-D Plasmon in GaN-Based High Electron Mobility Transistors
	LinWang ; Xiao-ShuangChen ; Wei-DaHu ; WeiLu
刊名	IEEE J SEL TOP QUANT
	2013
卷号	19 期号:1
关键词	Highelectronmobilitytransistors(HEMTs) plasmonics spectrum terahertz(THz)detectors
学科主题	红外基础研究
公开日期	2014-11-10
内容类型	期刊论文
源URL	[http://202.127.1.142/handle/181331/7700]
专题	上海技术物理研究所_上海技物所
推荐引用方式 GB/T 7714	LinWang,Xiao-ShuangChen,Wei-DaHu,et al. Spectrum Analysis of 2-D Plasmon in GaN-Based High Electron Mobility Transistors[J]. IEEE J SEL TOP QUANT,2013,19(1).
APA	LinWang,Xiao-ShuangChen,Wei-DaHu,&WeiLu.(2013).Spectrum Analysis of 2-D Plasmon in GaN-Based High Electron Mobility Transistors.IEEE J SEL TOP QUANT,19(1).
MLA	LinWang,et al."Spectrum Analysis of 2-D Plasmon in GaN-Based High Electron Mobility Transistors".IEEE J SEL TOP QUANT 19.1(2013).