激光辐照引起Ge2Sb2Te5非晶态薄膜的电/光性质变化

CORC > 上海光学精密机械研究所 > 中国科学院上海光学精密机械研究所 > 高密度光存储技术实验室

	激光辐照引起Ge2Sb2Te5非晶态薄膜的电/光性质变化; Laser induced change in the electrical and optical properties of amorphous Ge2Sb2Te5 thin films
	孙华军 ; 侯立松 ; 吴谊群 ; 魏劲松
刊名	无机材料学报
	2008
卷号	23 期号:6 页码:1111
关键词	Ge2Sb2Te5薄膜 Ge2Sb2Te5 film 激光辐照 laser-irradiation 电/光性质 electrical/optical properties 光学常数 optical constants 相转变 phase change
ISSN号	1000-324X
其他题名	Laser induced change in the electrical and optical properties of amorphous Ge2Sb2Te5 thin films
中文摘要	研究了激光辐照引起Ge2Sb2Te5非晶态薄膜的电/光性质变化,当激光功率为580mW时薄膜的方块电阻有四个数量级（10^7～10^3Ω/□）的突变;对电阻发生突变前、中、后的三个样品进行了XRD测试,结果表明,随着激光功率的增大,薄膜由非晶态向晶态转变,用椭偏仪测试了结构转变前、中、后三个样品的光学常数,在可见光范围内薄膜的光学常数在波长相同情况下有：n（非晶态）〉n（中间态）〉n（晶态）,k（晶态）〉k（中间态）〉k（非晶态）,α（晶态）〉α（中间态）〉α（非晶态）,结合电阻变化曲线和XRD图谱讨论了激光辐照Ge2Sb2Te5非晶态薄膜的电/光性质变化同激光功率和结构转变之间的关系.; Sheet resistance of laser-irradiated amorphous Ge2Sb2Te5 thin films prepared by magnetron sputtering were measured by the four-point probe method. With the laser power increasing, the sheet resistance undergoes an abrupt change of four orders of magnitude (10(7) - 10(3)Omega/rectangle) at about 580mW. X-ray diffraction studies of the three samples before, at and after the abruption point reveal the phase change process of the Ge2Sb2Te5 thin films from amorphous to crystal states. Optical constants of the three samples measured by ellipsometry have relations as follows, n(amorphous) > n(intermediate) > n(crystalline;) k(crystalline) > k(intermediate) > k(amorphouse;) alpha(crystalline) > alpha(intermediate) >alpha(amorphous). Based on the above results, the relationship between the electrical/optical properties and the structural state of the Ge2Sb2Te5 thin films is discussed.
学科主题	光存储
分类号	O471;O472
收录类别	EI
语种	中文
公开日期	2009-09-22 ; 2010-10-12
内容类型	期刊论文
源URL	[http://ir.siom.ac.cn/handle/181231/4031]
专题	上海光学精密机械研究所_高密度光存储技术实验室
推荐引用方式 GB/T 7714	孙华军,侯立松,吴谊群,等. 激光辐照引起Ge2Sb2Te5非晶态薄膜的电/光性质变化, Laser induced change in the electrical and optical properties of amorphous Ge2Sb2Te5 thin films[J]. 无机材料学报,2008,23(6):1111, 1114.
APA	孙华军,侯立松,吴谊群,&魏劲松.(2008).激光辐照引起Ge2Sb2Te5非晶态薄膜的电/光性质变化.无机材料学报,23(6),1111.
MLA	孙华军,et al."激光辐照引起Ge2Sb2Te5非晶态薄膜的电/光性质变化".无机材料学报 23.6(2008):1111.