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题名	掺质β-Ga2O3单晶的制备及性能研究
作者	王璐璐
学位类别	硕士
答辩日期	2013
授予单位	中国科学院上海光学精密机械研究所
导师	夏长泰 研究员
关键词	β-Ga2O3 Si:β-Ga2O3 Ni:β-Ga2O3 浮区法
其他题名	Growth and Characterization of Doped Single Crystal β-Ga2O3
中文摘要	作为一种宽禁带半导体材料，β-Ga2O3单晶已经在光电子领域受到了广泛的关注。 半导体功率电子器件是电力电子装置的核心部件，其相应的研究对于提高能源利用率和环境保护方面具有重要的意义。近来研究发现，宽禁带半导体具有击穿场强大、功率转换效率高、功率密度大及可在高温下工作等优点，因此以宽禁带半导体为基础的功率器件有望成为主流。SiC和GaN是宽禁带半导体的主要代表，但是二者难以较低成本实现高质量、大尺寸单晶制备，在一定程度上阻碍了他们在功率器件方面的发展。β-Ga2O3作为一种宽禁带半导体，可以采用浮区法和导模法制备，有望实现高质量、大尺寸、低成本的单晶制备。本文尝试利用浮区法生长Si:β-Ga2O3晶体，分析了SiO2掺杂对晶体光学性能和电学性能的影响。 随着通讯技术的发展，超大容量信息传输成为光通讯领域的研究重点，这对于光放大器中的增益材料提出了更高的要求。目前近红外波段增益材料的研究很多是基于玻璃、微晶玻璃基质的，但是这些材料本身的特点会影响发光效率和发光寿命；由于掺杂离子的能级特点，稀土离子的发光峰较窄，而过渡金属离子通常表现为较宽的发光峰。本文尝试利用浮区法生长Ni:β-Ga2O3晶体，分析了NiO的掺杂对晶体光学性能的影响，探讨了掺杂浓度及退火对近红外发光的影响。 本论文的主要内容包括： （1）利用浮区法生长了纯β-Ga2O3单晶。计算了晶面密度，并且结合负离子配位多面体理论简要分析了各个晶面生长速度和形成解理面的原因。 （2）利用光学显微镜及扫描电子显微镜观察到晶体中心区域存在包含气泡的包裹体，对晶片进行腐蚀处理后，该包裹体逐渐淡化，甚至有些消失，并且简要分析了包裹体的形成原因。通过计算得到晶体的缺陷密度约为1.54×106/cm2。利用排水法测得纯β-Ga2O3晶体的密度为5.86 g/cm3，这与文献中的结果相符。 （3）使用不同晶态的SiO2作为掺杂剂，利用浮区法分别生长了不同掺杂浓度的 Si:β-Ga2O3单晶。研究了SiO2的掺杂对Si:β-Ga2O3单晶性能的影响，包括对拉曼光谱、吸收光谱、荧光光谱和电学性能的影响。 （4）利用浮区法生长了4种不同掺杂浓度的Ni:β-Ga2O3晶体，晶体的颜色随掺杂浓度的增加，从淡蓝色逐渐变为绿色。分析了NiO的掺杂对Ni:β-Ga2O3单晶性能的影响，包括拉曼光谱、吸收光谱和荧光光谱。
英文摘要	As one of wide band gap (WBG) semiconductor materials, β-Ga2O3 single crystal has received considerable attention in optoelectronics. The semiconductor power device is the core component of electronic devices, which is of importance to increase energy efficiency and environmental protection. Recently, it is reported that WBG semiconductor has the advantages of high breakdown voltage, high power conversion efficiency, high power density and work under high temperature. Power device based WBG semiconductor promises well as main product in the future. SiC and GaN are the main representatives of WBG semiconductors. It is difficult to grow SiC and GaN crystals with high quality, large size and low cost, slowing down their progress in the field of power device. β-Ga2O3, as one of WBG semiconductors, can be grown by floating zone and edge-defined film-fed crystal technique, and it is possible to grow high quality crystal. Consequently, Si:β-Ga2O3 single crystal is grown by floating zone technique, and SiO2 doping effects will be studied on optical and electrical properties. With the development of telecommunication industry, the field has been focused on the research of super-high-capacity information transmission, which results in higher demand of the gain material in optical amplifier. Now, many gain materials are based on glass and glass ceramics. However, low quantum efficiency and lifetime were observed in such materials. The width of rare-earth ions emission peak is much smaller than that of transition metals. In the paper, Ni:β-Ga2O3 single crystal is grown by floating zone technique, NiO doping effects will be studied on optical property, and the effects of doping concentration and annealing process will also be researched on NIR emission. The main content is as follows: (1) β-Ga2O3 single crystal has been grown by floating zone technique. The surface density has been calculated, and different growth speed in different direction and the cleavage have been illustrated by annion coordination polyhedron model. (2) Using optical microscopy and scanning electronic microscopy, some inclusions were observed in the central region. Some inclusions faded after chemical etching process, or even disappeared. The reason of inclusion formation has been discussed. The defect density has been calculated as 1.54×106/cm2. The density of β-Ga2O3 crystal has been measured by means of drainage method. (3) Si:β-Ga2O3 single crystals with different types of SiO2 and doping concentrations have been grown by floating zone technique. The effects of SiO2 doping have been investigated on properties, including Raman spectrum, absorption spectrum, fluorescence spectrum and electrical property. (4) Ni:β-Ga2O3 single crystals with different doping concentrations have been grown by floating zone technique. The color changed from light blue to green with the increase of doping concentration. The effects of NiO doping have been investigated on optical properties, including Raman spectrum, absorption spectrum and fluorescence spectrum.
语种	中文
内容类型	学位论文
源URL	[http://ir.siom.ac.cn/handle/181231/16747]
专题	上海光学精密机械研究所_学位论文
推荐引用方式 GB/T 7714	王璐璐. 掺质β-Ga2O3单晶的制备及性能研究[D]. 中国科学院上海光学精密机械研究所. 2013.

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