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题名	氧化锌微纳结构光学微腔光电子学性能研究
作者	柳洋
学位类别	博士
答辩日期	2015
授予单位	中国科学院上海光学精密机械研究所
导师	张龙
关键词	ZnO 平行四边形 类波导FP腔 Cross-WGM ZnO/GaN
其他题名	Investigation on photoelectronic property of ZnO microstructure microcavity
中文摘要	半导体光学微腔是半导体低维结构与量子光学的交叉前沿领域，是研究光与物质相互作用的最基本载体，是目前光学微腔领域的研究热点。半导体微纳结构用于光学微腔，其自身既是微腔又是增益介质，能够对其自身发光进行有效的调制。微腔对光的这种调控能力使其在激光器、光开关、光学滤波器等方面具有广泛的应用。近年来，光电子器件的小型化、集成化和高效率是信息科技发展的必然趋势，微米、亚微米量级小尺寸光学微腔展现出特别的优势和巨大的潜力。具有特定形状的半导体纳米结构是实现光场有效调控的基础和前提，也是微腔基微型光电子器件的基本单元，所以如何设计和制备具有特定几何构型的半导体光学微腔成为人们关注的焦点。 ZnO作为一种新型的 II-VI 族直接宽禁带半导体材料，具有压电、热电、气敏、光电导等多种性能，在室温下，其禁带宽度为3.37eV，同时具有较高的激子束缚能(60meV，大于室温下的热能26meV)， 室温下能实现有效的激子发射，可以用来制备蓝光或紫外发光二极管(LEDs)和激光器(LDs)等光电器件，在光电领域具有极大的发展潜力。ZnO半导体光学微腔应用的研究，备受人们关注，在微腔制备和光场调制方面，尤其是ZnO微腔调制的紫外激射效应取得了很多重要的研究成果。ZnO光学微腔虽然具有诸多优势，然而，由于其结构和形貌单一，且电学性能较差，这种情况不仅阻碍了微腔模式的发展，也很大程度上限制了ZnO在光电器件方面的发展。研究表明，通过掺杂各种功能离子可以实现形貌控制，能带调控，电磁性质和P型转变，可扩展ZnO光学微腔在光电器件的应用领域，因此高质量的掺杂ZnO光学微腔的合成具有重要的研究意义。 第一章首先综述了“自发辐射控制”这一物理概念的起源，引出光学微腔的概念和意义，并探讨了光学微腔形成光学模式的共振条件的推导，最后提出该课题的选题依据和研究思路 第二章介绍了ZnO的结构、光学性质以及目前用于制备ZnO微纳结构光学微腔的常用生长技术以及生长机理，最后介绍了本论文中所需要使用的仪器。 第三章介绍了使用Sb2O3为掺杂源，利用碳热还原法制备具有平行四边形截面ZnO微米线并研究其成分、结构以及光学性能。拉曼和XPS结果表明Sb杂质原子可能进入了ZnO晶格。在微米线的生长机理研究中，发现Sb薄膜对氧化锌的生长和形貌具有重要影响。我们通过共焦荧光光谱仪研究了微米线的光谱调制行为和紫外激射效应，提出新颖的类波导FP光学模式并得到了有限元数值模拟的验证，最后研究了共振模式随微腔尺寸的演化过程。这种新型的类波导FP光学微腔可以应用于新的光电子器件。 第四章介绍了平行四边形截面ZnO微米线中Sb杂质原子对样品光电性能的影响，由于Sb是潜在的p型掺杂剂，我们研究了退火处理对Sb相关缺陷的影响。低温荧光光谱和激射光谱的研究发现，不同气氛下退火之后的ZnO微米线在低温光谱上显示了受主束缚激子发光的光谱特性。与此同时，退火后的样品与功率相关的紫外激射效应也进行了深入研究，并在平行四边形氧化锌微米线光学微腔中实现了类波导FP腔调制的激射效应。随后微米线场效应管和冷热探针法测试的结果表明Sb杂质没有对样品导电类型产生实质性的影响。XPS层析技术分析结果表明，经过Ar离子刻蚀之后的样品Sb元素信号消失，因此Sb元素仅仅存在于样品浅层表面，说明Sb元素及其化合物在样品生长过程中起到类似催化剂的作用。 第五章介绍了通过减少原料中Sb2O3的含量，来研究不同Sb相对含量对ZnO形貌的影响。本章利用碳热还原法成功制备出具有四边形梳干和拉长六角截面梳齿的ZnO梳状结构并研究了其生长机理。荧光光谱研究表明这种梳状结构具有良好的光谱调制行为，而且经研究发现，拉长六角截面梳齿中存在一种新型的回音壁模式——Cross-WGM，我们通过有限元数值模拟的方法非常好的解释了我们的实验结果。同时，实验结果表明，该类Cross-WGM共振模式对拉长六角截面微腔的长边和短边的比值具有一定的依赖关系。该梳状结构为多级结构光学微腔和新微腔形式的研究提供了坚实的基础。 第六章介绍了利用现有的高质量ZnO光学微腔与p型GaN薄膜形成pn结，制备高效的电致发光与激射器件的一些初步结果，为后续的微腔调制电致紫外激射效应研究提供前期实验积累。 第七章是本论文的总结部分，概括了全文的实验研究结果和后期实验的展望。
英文摘要	Semiconductor optical resonator is the cross forefront of the quantum optics and low-dimensional semiconductor structures, is the most basic research platform of the light and matter interaction, and become a hotspot in the field of optical resonator. As an optical resonator, the semiconductor nano/microstructure itself serves as both the gain medium and the optical microcavity. Light field can be restricted and effectively modulated by the resonators. Such precise manipulation of light-matter interaction is essential for the miniaturization of optoelectronic devices such as lasers, optical wave-guide and optical sensors. In recent years, with the development of miniaturization, integration and high efficiency optoelectronic devices, micron, submicron scale optical resonators show the special advantages and potential applications. To maximize optical modulation efficiency, the semiconductor oxide nano/microstructure requires high crystal quality, regular geometrical structure, smooth surfaces and approximated wavelength level size, which leads to high demands on the sample preparation. So how to design and preparation of a specific geometric configuration of semiconductor optical resonators become a challenge issue. As a new type II - VI direct wide bandgap semiconductor materials, ZnO have a variety of performance such as piezoelectric, pyroelectric, gas sensor and optical waveguide. ZnO has a wide-band-gap (~3.37 eV) and large exciton binding energy (~60 meV) at room temperature, which can realize effective exciton emission at high temperature. These properties make ZnO a good candidate for high efficient photoelectronic devices such as blue or ultraviolet light-emitting diodes (LEDs) and laser diodes (LDs). In the optical resonator application, ZnO was also attract much attention and enomous efforts have been devoted into the preparation, optical modulation of the ZnO microstructure microcavities. Important progress has been made especially in UV lasing effect of ZnO microcavity. However, the development of the cavity mode and the optoelectronic devices are realy slow because the monotonous structure and morphology of the ZnO microstructure, and poor electrical performance. Previous research reported that intentional doping in ZnO can achieve morphology control, band-gap engineering, electromagnetic properties and p-type transition, which will extense the application of the ZnO optical microcavity based photoelectric device. Thus, high quality intentional doped ZnO microcavity is an important issue. Firstly, the background and the development of “the control of spontaneous emission” was revealed in the Chapter 1, then the concept and significance of the microcavity was introduced. The principle of the resonance of the light field was deduced based on electrodynamics. Finally, we demonstrate the topic basis and the research content of this work. In chapter 2, we introduced the structure, optical property, preparation and the growth mechanism of the ZnO micro/nanostructures. We also introduced t the synthesis and characterization equipment of the ZnO microstructures. In chapter 3, we report the formation, structure, optical modulations and UV lasing of ZnO microwirewith parallelogram cross section using Sb2O3 as dopant through carbonthermal method. Raman and XPS results shows that the Sb ions was probably introduced into the lattice of ZnO. Growth mechanism was investigated systematically, the Sb film has important effects on the growth and morphology of ZnO microstructure. Optical modulations and UV lasing were directly observed by spatially resolved confocal spectroscopic system at room temperature. Wave-guided FP mode was identified by calculations based on the plane wave interference model and further confirmed by Finite Element Method (FEM) simulations. Furthermore, the size-dependent cavity modulation behaviours of the optical resonators were also investigated in detail. Such new wave-guided FP microcavity may be an ideal candidate for developing novel optical devices. In chaper 4 we demonstrated the investigation of how the Sb dopant affect the optical and electrical properties of the ZnO microwire. Because Sb was a typical p-type dopant of ZnO material, the activation of Sb related acceptors of the obtained ZnO microwires by annealing in two different atmospheres was investigated in our experiment. The results of low-temperature spectrum detection revealed that the ZnO microwire shows an acceptor related emission. In addition, the power-dependent evolutions of the lasing properties of the annealed ZnO resonators were also investigated, respectively. The microwire field effect transistor and hot probe measurements show that, the Sb defects have no influence on the condutive behavior of ZnO microwires. The latest XPS result reveals that the Sb signal disappeared after etched by Ar ion beam, which means Sb ions was just existed in the surface layer of ZnO microwires. The results demonstrated that the Sb and its compounds show an catalyst behavior in the growth of ZnO microwire. In chapter 5 we reported the investigation of the morphology control of ZnO nano/microstructure by reducing the ratio of Sb2O3 in the source material. The ZnO microcombs with parallelogram stems and elongated hexagonal branches were fabricated successfully through carbothermal reduction method. The growth mechanism was investigated systematically. PL measurement reveals that the microcombs can be an excelent optical resonators. Cross-WGM modes were directly observed at the branches of microcomb. Theoretical analyses based on the plane wave mode and FEM simulations agreed well with the experimental results. Size-dependent cavity mode evolution of the branches were also investigated in detail. This ZnO microcomb microcavity can be a good candidate for the investigation of hierarchical microcavity. The chapter 6 we report the combination of the synthesized high quality ZnO optical microcavity and p-type GaN film for pn junction. The preparation of efficient electroluminescent device and some preliminary results were achieved. Such result will be a solid foundation of the subsequent development of laser diode. The chapter 7 is the conclusion of this paper, summarized the full text of the experiment results and light up the future works.
语种	中文
内容类型	学位论文
源URL	[http://ir.siom.ac.cn/handle/181231/15901]
专题	上海光学精密机械研究所_学位论文
推荐引用方式 GB/T 7714	柳洋. 氧化锌微纳结构光学微腔光电子学性能研究[D]. 中国科学院上海光学精密机械研究所. 2015.

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