Fast model for mask spectrum simulation and analysis of mask shadowing effects in extreme ultraviolet lithography

CORC > 上海光学精密机械研究所 > 中国科学院上海光学精密机械研究所 > 信息光学与光电技术实验室

	Fast model for mask spectrum simulation and analysis of mask shadowing effects in extreme ultraviolet lithography
	Liu, Xiaolei ; Wang, Xiangzhao ; Li, Sikun ; Yan, Guanyong ; Erdmann, Andreas
刊名	j. micro-nanolithogr. mems moems
	2014
卷号	13 期号:3 页码:33007
关键词	extreme ultraviolet lithography mask model shadowing effect pattern shift critical dimension bias
通讯作者	wang, xz (reprint author), chinese acad sci, shanghai inst opt & fine mech siom, lab informat opt & optoelect technol, shanghai 201800, peoples r china.
英文摘要	a fast model is developed for the simulation of the mask diffraction spectrum in extreme ultraviolet lithography. it combines a modified thin mask model and an equivalent layer method and provides an analytical expression of the diffraction spectrum of the mask. based on this model, we perform a theoretical analysis of the mask shadowing effect. mathematical expressions for the best mask (object space) focus position and for the required correction of the mask pattern size are derived. when the mask focus is positioned in the equivalent plane of the multilayer, the amount of pattern shift is reduced. when the mask pattern size is corrected using the derived formula, taking a space pattern with a target critical dimension (cd) of 22 nm as an example, the imaging cd bias between different oriented features is below 0.3 nm. (c) 2014 society of photo-optical instrumentation engineers (spie)
收录类别	SCI
语种	英语
内容类型	期刊论文
版本	出版稿
源URL	[http://ir.siom.ac.cn/handle/181231/13691]
专题	上海光学精密机械研究所_信息光学与光电技术实验室
作者单位	1.[Liu, Xiaolei 2.Wang, Xiangzhao 3.Li, Sikun 4.Yan, Guanyong] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech SIOM, Lab Informat Opt & Optoelect Technol, Shanghai 201800, Peoples R China 5.[Erdmann, Andreas] Fraunhofer Inst Integrated Syst & Device Technol, D-
推荐引用方式 GB/T 7714	Liu, Xiaolei,Wang, Xiangzhao,Li, Sikun,et al. Fast model for mask spectrum simulation and analysis of mask shadowing effects in extreme ultraviolet lithography[J]. j. micro-nanolithogr. mems moems,2014,13(3):33007.
APA	Liu, Xiaolei,Wang, Xiangzhao,Li, Sikun,Yan, Guanyong,&Erdmann, Andreas.(2014).Fast model for mask spectrum simulation and analysis of mask shadowing effects in extreme ultraviolet lithography.j. micro-nanolithogr. mems moems,13(3),33007.
MLA	Liu, Xiaolei,et al."Fast model for mask spectrum simulation and analysis of mask shadowing effects in extreme ultraviolet lithography".j. micro-nanolithogr. mems moems 13.3(2014):33007.