Optical properties and structure of Sb-rich AgInSbTe phase change thin films | |
Zhang GJ ; Gu DH(顾冬红) ; Gan FX(干福熹) | |
刊名 | chin. phys.
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2005 | |
卷号 | 14期号:1页码:218 |
关键词 | thin films phase change Sb-rich AgInSbTe |
ISSN号 | 1009-1963 |
中文摘要 | a new composition content quaternary-alloy-based phase change thin film, sb-rich aginsbte, has been prepared by dc-magnetron sputtering on a k9 glass substrate. after the film has been subsequently annealed at 200degreesc for 30 min, it becomes a crystalline thin film. the diffraction peak of antimony (sb) are observed by shallow (0.5 degree) x-ray diffraction in the quaternary alloy thin film. the analyses of the measurement from differential scanning calorimetry (dsc) show that the crystallization temperature of the phase change thin film is about 190degreesc and increases with the heating rate. by kissinger plot, the activation energy for crystallization is determined to be 3.05ev. the reflectivity, refractive index and extinction coefficient of the crystalline and amorphous phase change thin films are presented. the optical absorption coefficient of the phase change thin films as a function of photon energy is obtained from the extinction coefficient. the optical band gaps of the amorphous and crystallization phase change thin films are 0.265ev and 1.127ev, respectively. |
学科主题 | 光存储 |
收录类别 | EI |
语种 | 英语 |
WOS记录号 | WOS:000226473900040 |
公开日期 | 2009-09-22 |
内容类型 | 期刊论文 |
源URL | [http://ir.siom.ac.cn/handle/181231/3803] ![]() |
专题 | 上海光学精密机械研究所_高密度光存储技术实验室 |
推荐引用方式 GB/T 7714 | Zhang GJ,Gu DH,Gan FX. Optical properties and structure of Sb-rich AgInSbTe phase change thin films[J]. chin. phys.,2005,14(1):218, 222. |
APA | Zhang GJ,顾冬红,&干福熹.(2005).Optical properties and structure of Sb-rich AgInSbTe phase change thin films.chin. phys.,14(1),218. |
MLA | Zhang GJ,et al."Optical properties and structure of Sb-rich AgInSbTe phase change thin films".chin. phys. 14.1(2005):218. |
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