Controllable crystallization of Ge2Sb2Te5 phase-change memory thin films driven by multiple femtosecond laser pulses

CORC > 上海光学精密机械研究所 > 中国科学院上海光学精密机械研究所 > 高密度光存储技术实验室

	Controllable crystallization of Ge2Sb2Te5 phase-change memory thin films driven by multiple femtosecond laser pulses
	Yang, Qiusong ; Cai, Zhilong ; Wang, Yang ; Huang, Huan ; Wu, Yiqun
刊名	mater. sci. eng. b
	2015
卷号	193 页码:189
通讯作者	wang, y (reprint author), 390 qinghe rd, shanghai 201800, peoples r china.
英文摘要	in this study, controllable crystallization processes of as-deposited amorphous ge2sb2te5 phase-change memory thin films driven by multiple femtosecond laser pulses were investigated in detail. the threshold effects of pulse fluence and the number of pulses were analyzed comprehensively using real-time reflectivity measurements and two-temperature model calculations. the different optical transients indicated three kinds of crystallization processes at low, medium, and high fluences. these results may provide further insights into the ultrafast phase-transition mechanics and are useful in the design of programmable multi-level logic devices based on phase change memory materials. (c) 2014 elsevier b.v. all rights reserved.
收录类别	SCI
语种	英语
内容类型	期刊论文
版本	出版稿
源URL	[http://ir.siom.ac.cn/handle/181231/13910]
专题	上海光学精密机械研究所_高密度光存储技术实验室
作者单位	1.[Yang, Qiusong 2.Cai, Zhilong 3.Wang, Yang 4.Huang, Huan 5.Wu, Yiqun] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab High Power Laser Mat, Shanghai 201800, Peoples R China
推荐引用方式 GB/T 7714	Yang, Qiusong,Cai, Zhilong,Wang, Yang,et al. Controllable crystallization of Ge2Sb2Te5 phase-change memory thin films driven by multiple femtosecond laser pulses[J]. mater. sci. eng. b,2015,193:189.
APA	Yang, Qiusong,Cai, Zhilong,Wang, Yang,Huang, Huan,&Wu, Yiqun.(2015).Controllable crystallization of Ge2Sb2Te5 phase-change memory thin films driven by multiple femtosecond laser pulses.mater. sci. eng. b,193,189.
MLA	Yang, Qiusong,et al."Controllable crystallization of Ge2Sb2Te5 phase-change memory thin films driven by multiple femtosecond laser pulses".mater. sci. eng. b 193(2015):189.