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	Strong Microwave Absorption of Hydrogenated Wide Bandgap Semiconductor Nanoparticles
	Xia, T.; Y. H. Cao; N. A. Oyler; J. Murowchick; L. Liu and X. B. Chen
刊名	Acs Applied Materials & Interfaces
	2015
卷号	7期号:19页码:10407-10413
英文摘要	Electromagnetic interactions in the microelectronvolt (mu eV) or microwave region have numerous important applications in both civil and military fields, such as electronic communications, signal protection, and antireflective coatings on airplanes against microwave detection. Traditionally, nonmagnetic wide-bandgap metal oxide semiconductors lack these mu eV electronic transitions and applications. Here, we demonstrate that these metal oxides can be fabricated as good microwave absorbers using a 2D electron gas plasma resonance at the disorder/order interface generated by a hydrogenation process. Using ZnO and TiO2 nanoparticles as examples, we show that large absorption with reflection loss values as large as -49.0 dB (99.99999%) is obtained in the microwave region. The frequency of absorption can be tuned with the particle size and hydrogenation condition. These results may pave the way for new applications for wide bandgap semiconductors, especially in the mu eV regime.
收录类别	SCI ; EI
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/55479]
专题	长春光学精密机械与物理研究所_中科院长春光机所知识产出
推荐引用方式 GB/T 7714	Xia, T.,Y. H. Cao,N. A. Oyler,et al. Strong Microwave Absorption of Hydrogenated Wide Bandgap Semiconductor Nanoparticles[J]. Acs Applied Materials & Interfaces,2015,7(19):10407-10413.
APA	Xia, T.,Y. H. Cao,N. A. Oyler,J. Murowchick,&L. Liu and X. B. Chen.(2015).Strong Microwave Absorption of Hydrogenated Wide Bandgap Semiconductor Nanoparticles.Acs Applied Materials & Interfaces,7(19),10407-10413.
MLA	Xia, T.,et al."Strong Microwave Absorption of Hydrogenated Wide Bandgap Semiconductor Nanoparticles".Acs Applied Materials & Interfaces 7.19(2015):10407-10413.

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