Growth of large-scale heteroepitaxial 3C-SiC films and nanosheets on silicon substrates by microwave plasma enhanced CVD at higher powers

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	Growth of large-scale heteroepitaxial 3C-SiC films and nanosheets on silicon substrates by microwave plasma enhanced CVD at higher powers
	Wang, Chun ; Huang, Nan ; Zhuang, Hao ; Zhai, Zhaofeng ; Yang, Bing ; Liu, Lusheng ; Jiang, Xin
刊名	SURFACE & COATINGS TECHNOLOGY
	2016-08-15
卷号	299 页码:96-103
关键词	SiC films MPCVD Heteroepitaxial Large-scale 2D nanosheets
ISSN号	0257-8972
通讯作者	Jiang, X (reprint author), Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Wenhua Rd 72, Shenyang 110016, Peoples R China.
学科主题	Materials Science ; Physics
收录类别	SCI
资助信息	National Natural Science Foundation of China [51202257]
语种	英语
公开日期	2016-08-22
内容类型	期刊论文
源URL	[http://ir.imr.ac.cn/handle/321006/75771]
专题	金属研究所_中国科学院金属研究所
推荐引用方式 GB/T 7714	Wang, Chun,Huang, Nan,Zhuang, Hao,et al. Growth of large-scale heteroepitaxial 3C-SiC films and nanosheets on silicon substrates by microwave plasma enhanced CVD at higher powers[J]. SURFACE & COATINGS TECHNOLOGY,2016,299:96-103.
APA	Wang, Chun.,Huang, Nan.,Zhuang, Hao.,Zhai, Zhaofeng.,Yang, Bing.,...&Jiang, Xin.(2016).Growth of large-scale heteroepitaxial 3C-SiC films and nanosheets on silicon substrates by microwave plasma enhanced CVD at higher powers.SURFACE & COATINGS TECHNOLOGY,299,96-103.
MLA	Wang, Chun,et al."Growth of large-scale heteroepitaxial 3C-SiC films and nanosheets on silicon substrates by microwave plasma enhanced CVD at higher powers".SURFACE & COATINGS TECHNOLOGY 299(2016):96-103.