Combined Frequency- and Time-Domain Photocarrier Radiometry Characterization for Annealing Temperature Dependence of Arsenic Ion-Implanted Silicon Wafers

CORC > 光电技术研究所 > 中国科学院光电技术研究所 > 薄膜光学技术研究室（十一室）

	Combined Frequency- and Time-Domain Photocarrier Radiometry Characterization for Annealing Temperature Dependence of Arsenic Ion-Implanted Silicon Wafers
	Ren, Shengdong 1,2,3; Li, Bincheng 1,2; Wang, Qian 1,2,3
刊名	International Journal of Thermophysics
	2015
卷号	36 期号:5-6 页码:1045-1050
ISSN号	0195-928X
通讯作者	Li, Bincheng
中文摘要	The annealing temperature dependences of the photocarrier radiometry (PCR) amplitude, the frequency dependences of the PCR amplitude and phase, as well as the quasi-time-domain PCR waveforms were simultaneously employed to analyze the thermally annealed (500C to 1100C) silicon samples with arsenic ion (As+) implantation of 1×1015 cm-2 dose. The dependence of the carrier effective lifetime on the annealing temperature has been extracted from the normalized quasi-time-domain PCR waveform profiles, and showed to be related to the transient PCR signals. Furthermore, the phenomenon of the reduction of the carrier effective lifetime caused by incomplete annealing (above 700C and 30 s) of As+ implanted silicon samples were observed and analyzed. © 2014, Springer Science+Business Media New York.
英文摘要	The annealing temperature dependences of the photocarrier radiometry (PCR) amplitude, the frequency dependences of the PCR amplitude and phase, as well as the quasi-time-domain PCR waveforms were simultaneously employed to analyze the thermally annealed (500C to 1100C) silicon samples with arsenic ion (As+) implantation of 1×1015 cm-2 dose. The dependence of the carrier effective lifetime on the annealing temperature has been extracted from the normalized quasi-time-domain PCR waveform profiles, and showed to be related to the transient PCR signals. Furthermore, the phenomenon of the reduction of the carrier effective lifetime caused by incomplete annealing (above 700C and 30 s) of As+ implanted silicon samples were observed and analyzed. © 2014, Springer Science+Business Media New York.
学科主题	Annealing - Arsenic - Photoelectricity - Radiometry - Silicon - Temperature distribution
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000356611100032
内容类型	期刊论文
源URL	[http://ir.ioe.ac.cn/handle/181551/6642]
专题	光电技术研究所_薄膜光学技术研究室（十一室）
作者单位	1.Institute of Optics and Electronics, Chinese Academy of Sciences, P. O. Box 350, Shuangliu, Chengdu 2.Sichuan, China 3.Key Laboratory of Optical Engineering, Chinese Academy of Sciences, Shuangliu, Chengdu 4.Sichuan, China 5.University of the Chinese Academy of Sciences, Beijing, China
推荐引用方式 GB/T 7714	Ren, Shengdong,Li, Bincheng,Wang, Qian. Combined Frequency- and Time-Domain Photocarrier Radiometry Characterization for Annealing Temperature Dependence of Arsenic Ion-Implanted Silicon Wafers[J]. International Journal of Thermophysics,2015,36(5-6):1045-1050.
APA	Ren, Shengdong,Li, Bincheng,&Wang, Qian.(2015).Combined Frequency- and Time-Domain Photocarrier Radiometry Characterization for Annealing Temperature Dependence of Arsenic Ion-Implanted Silicon Wafers.International Journal of Thermophysics,36(5-6),1045-1050.
MLA	Ren, Shengdong,et al."Combined Frequency- and Time-Domain Photocarrier Radiometry Characterization for Annealing Temperature Dependence of Arsenic Ion-Implanted Silicon Wafers".International Journal of Thermophysics 36.5-6(2015):1045-1050.