Electronic transport characterization of silicon wafers by spatially resolved steady-state photocarrier radiometric imaging

CORC > 光电技术研究所 > 中国科学院光电技术研究所 > 薄膜光学技术研究室（十一室）

	Electronic transport characterization of silicon wafers by spatially resolved steady-state photocarrier radiometric imaging
	Wang, Qian 1,2; Li, Bincheng 1,3
刊名	Journal of Applied Physics
	2015
卷号	118 期号:12 页码:125705
ISSN号	0021-8979
通讯作者	Li, Bincheng
中文摘要	Spatially resolved steady-state photocarrier radiometric (PCR) imaging technique is developed to characterize the electronic transport properties of silicon wafers. Based on a nonlinear PCR theory, simulations are performed to investigate the effects of electronic transport parameters (the carrier lifetime, the carrier diffusion coefficient, and the front surface recombination velocity) on the steady-state PCR intensity profiles. The electronic transport parameters of an n-type silicon wafer are simultaneously determined by fitting the measured steady-state PCR intensity profiles to the three-dimensional nonlinear PCR model. The determined transport parameters are in good agreement with the results obtained by the conventional modulated PCR technique with multiple pump beam radii. © 2015 AIP Publishing LLC.
英文摘要	Spatially resolved steady-state photocarrier radiometric (PCR) imaging technique is developed to characterize the electronic transport properties of silicon wafers. Based on a nonlinear PCR theory, simulations are performed to investigate the effects of electronic transport parameters (the carrier lifetime, the carrier diffusion coefficient, and the front surface recombination velocity) on the steady-state PCR intensity profiles. The electronic transport parameters of an n-type silicon wafer are simultaneously determined by fitting the measured steady-state PCR intensity profiles to the three-dimensional nonlinear PCR model. The determined transport parameters are in good agreement with the results obtained by the conventional modulated PCR technique with multiple pump beam radii. © 2015 AIP Publishing LLC.
学科主题	Carrier lifetime - Imaging techniques - Photoelectricity - Polymerase chain reaction - Radiometry - Semiconducting silicon - Silicon
收录类别	SCI ; EI
语种	英语
WOS记录号	WOS:000362565800075
内容类型	期刊论文
源URL	[http://ir.ioe.ac.cn/handle/181551/6639]
专题	光电技术研究所_薄膜光学技术研究室（十一室）
作者单位	1.Institute of Optics and Electronics, Chinese Academy of Sciences, P. O. Box 350, Shuangliu, Chengdu, China 2.University of the Chinese Academy of Sciences, Beijing, China 3.School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, China
推荐引用方式 GB/T 7714	Wang, Qian,Li, Bincheng. Electronic transport characterization of silicon wafers by spatially resolved steady-state photocarrier radiometric imaging[J]. Journal of Applied Physics,2015,118(12):125705.
APA	Wang, Qian,&Li, Bincheng.(2015).Electronic transport characterization of silicon wafers by spatially resolved steady-state photocarrier radiometric imaging.Journal of Applied Physics,118(12),125705.
MLA	Wang, Qian,et al."Electronic transport characterization of silicon wafers by spatially resolved steady-state photocarrier radiometric imaging".Journal of Applied Physics 118.12(2015):125705.