Preparation and characterization of Si sheets by renewed SSP technique
Ai, B; Shen, H; Ban, Q; Wang, XJ; Liang, ZC; Liao, XB
刊名journal of crystal growth
2004-10-01
卷号270期号:3-4页码:446-454
关键词crystal structure recrystallization substrates growth from melt semiconducting silicon
英文摘要silicon sheets from powder (ssp) ribbons have been prepared by modified ssp technique using electronic-grade (9n purity) silicon powder. the surface morphology, crystallographic quality, composition and electric properties of the ssp ribbons were investigated by surface profiler, x-ray diffraction (xrd), scanning electron microscopy (sem), metallurgical microscope, auger electron spectroscopy (aes) and four-point probe apparatus, respectively. the results show that the ssp ribbon made from electronic-grade silicon powder is a suitable candidate for the substrates of crystalline silicon thin film (csitf) solar cells, which could meet the primary requirements of csitf solar cell process on the substrates, including surface smoothness, crystallographic quality, purity and electric conductivity, etc. (c) 2004 elsevier b.v. all rights reserved.
WOS标题词science & technology ; physical sciences ; technology
类目[WOS]crystallography ; materials science, multidisciplinary ; physics, applied
研究领域[WOS]crystallography ; materials science ; physics
关键词[WOS]film crystalline silicon ; solar-cell applications
收录类别SCI
语种英语
WOS记录号WOS:000224290100024
内容类型期刊论文
源URL[http://ir.giec.ac.cn/handle/344007/10205]  
专题中国科学院广州能源研究所
作者单位1.Chinese Acad Sci, Solar Energy Lab, Guangzhou Inst Energy Convers, Guangzhou 510640, Peoples R China
2.Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R China
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Ai, B,Shen, H,Ban, Q,et al. Preparation and characterization of Si sheets by renewed SSP technique[J]. journal of crystal growth,2004,270(3-4):446-454.
APA Ai, B,Shen, H,Ban, Q,Wang, XJ,Liang, ZC,&Liao, XB.(2004).Preparation and characterization of Si sheets by renewed SSP technique.journal of crystal growth,270(3-4),446-454.
MLA Ai, B,et al."Preparation and characterization of Si sheets by renewed SSP technique".journal of crystal growth 270.3-4(2004):446-454.
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