Rear-Sided Passivation by SiNx:H Dielectric Layer for Improved Si/PEDOT:PSS Hybrid Heterojunction Solar Cells

	Rear-Sided Passivation by SiNx:H Dielectric Layer for Improved Si/PEDOT:PSS Hybrid Heterojunction Solar Cells
	Sun, Yiling ; Gao, Pingqi ; He, Jian ; Zhou, Suqiong ; Ying, Zhiqin ; Yang, Xi ; Xiang, Yong ; Ye, Jichun
刊名	NANOSCALE RESEARCH LETTERS
	2016
卷号	11
ISSN号	1556-276X
公开日期	2016-09-18
内容类型	期刊论文
源URL	[http://ir.nimte.ac.cn/handle/174433/12941]
专题	宁波材料技术与工程研究所_2016专题
推荐引用方式 GB/T 7714	Sun, Yiling,Gao, Pingqi,He, Jian,et al. Rear-Sided Passivation by SiNx:H Dielectric Layer for Improved Si/PEDOT:PSS Hybrid Heterojunction Solar Cells[J]. NANOSCALE RESEARCH LETTERS,2016,11.
APA	Sun, Yiling.,Gao, Pingqi.,He, Jian.,Zhou, Suqiong.,Ying, Zhiqin.,...&Ye, Jichun.(2016).Rear-Sided Passivation by SiNx:H Dielectric Layer for Improved Si/PEDOT:PSS Hybrid Heterojunction Solar Cells.NANOSCALE RESEARCH LETTERS,11.
MLA	Sun, Yiling,et al."Rear-Sided Passivation by SiNx:H Dielectric Layer for Improved Si/PEDOT:PSS Hybrid Heterojunction Solar Cells".NANOSCALE RESEARCH LETTERS 11(2016).