Influence of dislocations on photoluminescence of InGaN/GaN multiple quantum wells

	Influence of dislocations on photoluminescence of InGaN/GaN multiple quantum wells
	Zhang, JC; Jiang, DS; Sun, Q; Wang, JF; Wang, YT; Liu, JP; Chen, J; Jin, RQ; Zhu, JJ; Yang, H
刊名	APPLIED PHYSICS LETTERS
	2005
卷号	87 期号:7 页码:71908
通讯作者	Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China ; Chinese Acad Sci, Inst Phys, Beijing Lab Electron Microscopy, Beijing 100083, Peoples R China ; Chinese Acad Sci, Inst High Energy Phys, Beijing Synchrotron Radiat Facil, Beijing 100039, Peoples R China
英文摘要	The influence of dislocations on photoluminescence (PL) of InGaN/GaN multiple quantum wells (MQWs) is investigated by triple-axis x-ray diffraction (TAXRD), transmission electron microscopy (TEM), and PL spectra. The omega scan of every satellite peak by TAXRD is adopted to evaluate the mean screw and edge dislocation densities in MQWs. The results show that dislocations can lead to a reduction of the PL-integrated intensity of InGaN/GaN MQWs under certain conditions, with edge dislocations playing a decisive role. Additionally, the dislocations can broaden the PL peak, but the effect becomes evident only under the condition when the interface roughness is relatively low. (C) 2005 American Institute of Physics.
学科主题	Physics
类目[WOS]	Physics, Applied
研究领域[WOS]	Physics
原文出处	SCI
语种	英语
WOS记录号	WOS:000231246000021
内容类型	期刊论文
源URL	[http://ir.ihep.ac.cn/handle/311005/240750]
专题	高能物理研究所_多学科研究中心高能物理研究所_实验物理中心
作者单位	中国科学院高能物理研究所
推荐引用方式 GB/T 7714	Zhang, JC,Jiang, DS,Sun, Q,et al. Influence of dislocations on photoluminescence of InGaN/GaN multiple quantum wells[J]. APPLIED PHYSICS LETTERS,2005,87(7):71908.
APA	Zhang, JC.,Jiang, DS.,Sun, Q.,Wang, JF.,Wang, YT.,...&贾全杰.(2005).Influence of dislocations on photoluminescence of InGaN/GaN multiple quantum wells.APPLIED PHYSICS LETTERS,87(7),71908.
MLA	Zhang, JC,et al."Influence of dislocations on photoluminescence of InGaN/GaN multiple quantum wells".APPLIED PHYSICS LETTERS 87.7(2005):71908.